AM29LV652DU90RMAI datasheet, PDF

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AM29LV652DU90RMAI: Description16M X 8 FLASH 3V PROM, 90 ns, PBGA63; Categorystorage storage; File Size660KB，55 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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AM29LV652DU90RMAI Overview

16M X 8 FLASH 3V PROM, 90 ns, PBGA63

AM29LV652DU90RMAI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SPANSION
Parts packaging code	BGA
package instruction	11 X 12 MM, 0.80 MM PITCH, FBGA-63
Contacts	63
Reach Compliance Code	_compli
ECCN code	3A991.B.1.A
Maximum access time	90 ns
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B63
JESD-609 code	e0
length	11.95 mm
memory density	134217728 bi
Memory IC Type	FLASH
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	256
Number of terminals	63
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX8
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA63,8X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3.3,3/5 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.7 mm
Department size	64K
Maximum standby current	0.00001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
switch bit	YES
type	NOR TYPE
width	10.95 mm

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Am29LV652D

Data Sheet

July 2003

The following document specifies Spansion memory products that are now offered by both Advanced

Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-

inally developed the specification, these products will be offered to customers of both AMD and

Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal datasheet improvement and are noted in the

document revision summary, where supported. Future routine revisions will occur when appropriate,

and changes will be noted in a revision summary.

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order

these products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about Spansion

memory solutions.

Publication Number

24961

Revision

Amendment

Issue Date

October 29, 2004

P R E L I M I N A R Y

TABLE OF CONTENTS

Distinctive Characteristics . . . . . . . . . . . . . . . . . . 1

General Description . . . . . . . . . . . . . . . . . . . . . . . . 2

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9

Table 1. Am29LV652D Device Bus Operations ................................9

Table 10. Am29LV652D Command Definitions ............................. 30

Write Operation Status . . . . . . . . . . . . . . . . . . . . 31

DQ7: Data# Polling ................................................................. 31

Figure 5. Data# Polling Algorithm .................................................. 31

RY/BY#: Ready/Busy# ............................................................ 32

DQ6: Toggle Bit I .................................................................... 32

Figure 6. Toggle Bit Algorithm........................................................ 32

VersatileIO

™

) Control ....................................................... 9

Requirements for Reading Array Data ..................................... 9

Writing Commands/Command Sequences ............................ 10

Accelerated Program Operation .......................................... 10

Autoselect Functions ........................................................... 10

Standby Mode ........................................................................ 10

Automatic Sleep Mode ........................................................... 10

RESET#: Hardware Reset Pin ............................................... 10

Output Disable Mode .............................................................. 11

Table 2. Sector Address Table for CE# ..........................................11

Table 3. Sector Address Table for CE2# ........................................15

DQ2: Toggle Bit II ................................................................... 33

Reading Toggle Bits DQ6/DQ2 ............................................... 33

DQ5: Exceeded Timing Limits ................................................ 33

DQ3: Sector Erase Timer ....................................................... 33

Table 11. Write Operation Status ................................................... 34

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 35

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 35

Figure 7. Maximum Negative Overshoot Waveform ..................... 35

Figure 8. Maximum Positive Overshoot Waveform....................... 35

DC Characteristics (for two Am29LV065 devices)

Figure 9. I

CC1

Current vs. Time (Showing Active and

Automatic Sleep Currents) ............................................................. 37

Figure 10. Typical I

CC1

vs. Frequency ............................................ 37

Figure 11. Test Setup.................................................................... 38

Table 12. Test Specifications ......................................................... 38

Figure 12. Input Waveforms and Measurement Levels ................. 38

Autoselect Mode ..................................................................... 19

Table 4. Am29LV652D Autoselect Codes, (High Voltage Method) 19

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Sector Group Protection and Unprotection ............................. 20

Table 5. Sector Group Protection/Unprotection Address Table .....20

Temporary Sector Group Unprotect ....................................... 21

Figure 1. Temporary Sector Group Unprotect Operation................ 21

Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 22

Key to Switching Waveforms. . . . . . . . . . . . . . . . 38

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39

Read-Only Operations ........................................................... 39

Figure 13. Read Operation Timings ............................................... 39

Hardware Data Protection ...................................................... 23

Low VCC Write Inhibit ......................................................... 23

Write Pulse “Glitch” Protection ............................................ 23

Logical Inhibit ...................................................................... 23

Power-Up Write Inhibit ......................................................... 23

Common Flash Memory Interface (CFI) . . . . . . . 23

Table 6. CFI Query Identification String ..........................................

System Interface String...................................................................

Table 8. Device Geometry Definition ..............................................

Table 9. Primary Vendor-Specific Extended Query ........................

Hardware Reset (RESET#) .................................................... 40

Figure 14. Reset Timings ............................................................... 40

Erase and Program Operations .............................................. 41

Figure 15. Program Operation Timings..........................................

Figure 16. Accelerated Program Timing Diagram..........................

Figure 17. Chip/Sector Erase Operation Timings ..........................

Figure 18. Data# Polling Timings (During Embedded Algorithms).

Figure 19. Toggle Bit Timings (During Embedded Algorithms)......

Figure 20. DQ2 vs. DQ6.................................................................

Command Definitions . . . . . . . . . . . . . . . . . . . . . 25

Reading Array Data ................................................................ 25

Reset Command ..................................................................... 26

Autoselect Command Sequence ............................................ 26

Byte Program Command Sequence ....................................... 26

Unlock Bypass Command Sequence .................................. 26

Figure 3. Program Operation .......................................................... 27

Temporary Sector Unprotect .................................................. 46

Figure 21. Temporary Sector Group Unprotect Timing Diagram ... 46

Figure 22. Sector Group Protect and Unprotect Timing Diagram .. 47

Figure 23. Alternate CE# Controlled Write

(Erase/Program) Operation Timings .............................................. 49

Chip Erase Command Sequence ........................................... 27

Sector Erase Command Sequence ........................................ 28

Erase Suspend/Erase Resume Commands ........................... 28

Figure 4. Erase Operation............................................................... 29

Erase And Programming Performance . . . . . . . 50

Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 50

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 51

FSA063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm

package .................................................................................. 51

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 52

October 29, 2004

Am29LV652D

AM29LV652DU90RMAI Related Products

	AM29LV652DU90RMAI	AM29LV652D	AM29LV652DU12RMAE	AM29LV652DU12RMAF	AM29LV652DU90RMAK	AM29LV652DU12RMAK	AM29LV652DU90RMAE	AM29LV652DU90RMAF	AM29LV652DU12RMAI
Description	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63	16M X 8 FLASH 3V PROM, 90 ns, PBGA63
length	11.95 mm	11.95 mm	11.95 mm	11.95 mm	11.95 mm	11.95 mm	11.95 mm	11.95 mm	11.95 mm
memory width	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1
Number of terminals	63	63	63	63	63	63	63	63	63
Maximum operating temperature	85 °C	85 Cel	125 °C	85 °C	85 Cel	125 °C	85 Cel	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 Cel	-55 °C	-40 °C	-40 Cel	-55 °C	-40 Cel	-40 °C	-40 °C
organize	16MX8	16MX8	16MX8	16MX8	16MX8	16MX8	16MX8	16MX8	16MX8
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Temperature level	INDUSTRIAL	INDUSTRIAL	MILITARY	INDUSTRIAL	INDUSTRIAL	MILITARY	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	10.95 mm	10.95 mm	10.95 mm	10.95 mm	10.95 mm	10.95 mm	10.95 mm	10.95 mm	10.95 mm
Is it Rohs certified?	incompatible	-	incompatible	conform to	-	conform to	-	conform to	incompatible
Parts packaging code	BGA	-	BGA	BGA	-	BGA	-	BGA	BGA
package instruction	11 X 12 MM, 0.80 MM PITCH, FBGA-63	-	11 X 12 MM, 0.80 MM PITCH, FBGA-63	11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63	-	11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63	-	11 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63	11 X 12 MM, 0.80 MM PITCH, FBGA-63
Contacts	63	-	63	63	-	63	-	63	63
Reach Compliance Code	_compli	-	_compli	unknow	-	unknow	-	unknow	_compli
ECCN code	3A991.B.1.A	-	3A001.A.2.C	3A991.B.1.A	-	3A001.A.2.C	-	3A991.B.1.A	3A991.B.1.A
Maximum access time	90 ns	-	120 ns	120 ns	-	120 ns	-	90 ns	120 ns
JESD-30 code	R-PBGA-B63	-	R-PBGA-B63	R-PBGA-B63	-	R-PBGA-B63	-	R-PBGA-B63	R-PBGA-B63
JESD-609 code	e0	-	e0	e1	-	e1	-	e1	e0
memory density	134217728 bi	-	134217728 bi	134217728 bi	-	134217728 bi	-	134217728 bi	134217728 bi
Memory IC Type	FLASH	-	FLASH	FLASH	-	FLASH	-	FLASH	FLASH
Humidity sensitivity level	3	-	3	3	-	3	-	3	3
word count	16777216 words	-	16777216 words	16777216 words	-	16777216 words	-	16777216 words	16777216 words
character code	16000000	-	16000000	16000000	-	16000000	-	16000000	16000000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	-	LFBGA	LFBGA	-	LFBGA	-	LFBGA	LFBGA
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	-	PARALLEL	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	-	240	260	-	260	-	260	240
Programming voltage	3 V	-	3 V	3 V	-	3 V	-	3 V	3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
Maximum seat height	1.7 mm	-	1.7 mm	1.7 mm	-	1.7 mm	-	1.7 mm	1.7 mm
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	-	3.6 V	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	-	3 V	-	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	-	3.3 V	-	3.3 V	3.3 V
technology	CMOS	-	CMOS	CMOS	-	CMOS	-	CMOS	CMOS
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	-	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	-	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	Tin/Lead (Sn/Pb)
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	-	0.8 mm	-	0.8 mm	0.8 mm
Maximum time at peak reflow temperature	30	-	30	40	-	40	-	40	30

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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