FDH50N50-F133 datasheet, PDF - EEWORLD Datasheet

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FDH50N50-F133: Description20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263; Categorysemiconductor Discrete semiconductor; File Size251KB，14 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDH50N50-F133 Overview

20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263

FDH50N50-F133 Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	600 V
Processing package description	LEAD FREE, D2PAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	20 A
Rated avalanche energy	690 mJ
Maximum drain on-resistance	0.1900 ohm
Maximum leakage current pulse	60 A

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PCN# : P315A

Issue Date : Feb. 04, 2013

DESIGN/PROCESS CHANGE NOTIFICATION

This is to inform you that a change is being made to the products listed below.

Unless otherwise indicated in the details of this notification, the identified change will have no impact on product

quality, reliability, electrical, visual or mechanical performance and affected products will remain fully compliant to all

published specifications. Products incorporating this change may be shipped interchangeably with existing unchanged

products.

This change is planned to take effect in 90 calendar days from the date of this notification. Please work with your local

Fairchild Sales Representative to manage your inventory of unchanged product if your evaluation of this change will

require more than 90 calendar days.

Please contact your local Customer Quality Engineer within 30 days of receipt of this notification if you require any

additional data or samples. Alternatively, you may send an email request for data, samples or other information to

PCNSupport@fairchildsemi.com.

Implementation of change:

Expected First Shipment Date for Changed Product : May. 05, 2013

Expected First Date Code of Changed Product :1327

Description of Change (From) :

5/6-in wafer fabrication line at Fairchild Semiconductor Bucheon Korea.

Description of Change (To) :

8-in wafer fabrication line at Fairchild Semiconductor Bucheon Korea.

Reason for Change:

Fairchild Semiconductor is increasing wafer fabrication capacity by qualifying an 8-in wafer fabrication line at Fairchild

Semiconductor Bucheon Korea. Quality and reliability remain at the highest standards already demonstrated within

Fairchild's existing products. The reliability qualification results used to qualify the 8-in wafer fabrication line are

summarized below. The specific groups of products/MOSFET technologies are listed in the affected FSIDs list. Design,

die size and layout of the affected products will remain unchanged. There are no changes in the datasheet or electrical

performance.

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