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M25P32-VMW3TGB

Description
4M X 8 FLASH 2.7V PROM, PDSO8
Categorystorage   
File Size612KB,50 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Download Datasheet Parametric Compare View All

M25P32-VMW3TGB Overview

4M X 8 FLASH 2.7V PROM, PDSO8

M25P32-VMW3TGB Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature125 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.7 V
maximum clock frequency75 MHz
Processing package description0.208 INCH, ROHS COMPLIANT, SOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelAUTOMOTIVE
memory width8
organize4M X 8
storage density3.36E7 deg
operating modeSYNCHRONOUS
Number of digits4.19E6 words
Number of digits4M
Memory IC typeFLASH 2.7V PROM
serial parallelSERIAL
Micron M25P32 Serial Flash Embedded Memory
Features
Micron M25P32 Serial Flash Embedded
Memory
M25P32-VMF3TPB, -VMF6PBA, -VMF6TP
M25P32-VMW3TGB, VMW6GBA
Features
SPI bus compatible serial interface
32Mb Flash memory
75 MHz clock frequency (maximum)
2.7V to 3.6V single supply voltage
V
PP
= 9V for FAST PROGRAM/ERASE mode (option-
al)
Page program (up to 256 bytes) in 0.64ms (TYP)
Erase capability
– Sector erase: 512Kb in 0.6 s (TYP)
– Bulk erase: 23 s (TYP); 17 s (TYP) with V
PP
= 9V
Write protection
– Hardware write protection: protected area size
defined by non-volatile bits BP0, BP1, BP2
Deep power down: 1µA (TYP)
• Electronic signature
– JEDEC standard 2-byte signature (2016h)
– Unique ID code (UID) and 16 bytes of common
flash interface (CFI) data
– RES command, one-byte signature (15h) for
backward compatibility
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Automotive grade parts available
• Packages (RoHS compliant)
– SO8W (MW) 208 mils
– SO16 (MF) 300 mils
– VFQFPN8 (MP) MLP8 6mm x 5mm
– VFDFPN8 (MP) MLP8 8mm x 6mm
PDF: 09005aef84566541
m25p32.pdf - Rev. M 9/11 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.

M25P32-VMW3TGB Related Products

M25P32-VMW3TGB M25P23-VMF6PBA M25P23-VMF6TP M25P23-VMW6GBA
Description 4M X 8 FLASH 2.7V PROM, PDSO8 4M X 8 FLASH 2.7V PROM, PDSO16 4M X 8 FLASH 2.7V PROM, PDSO16 4M X 8 FLASH 2.7V PROM, PDSO16
Number of functions 1 1 1 1
Number of terminals 8 16 16 16
Maximum operating temperature 125 Cel 125 Cel 125 Cel 125 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel
Maximum supply/operating voltage 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply/operating voltage 2.7 V 2.7 V 2.7 V 2.7 V
maximum clock frequency 75 MHz 75 MHz 75 MHz 75 MHz
Processing package description 0.208 INCH, ROHS COMPLIANT, SOP-8 0.300 INCH, ROHS COMPLIANT, SOP-16 0.300 INCH, ROHS COMPLIANT, SOP-16 0.300 INCH, ROHS COMPLIANT, SOP-16
EU RoHS regulations Yes Yes Yes Yes
state ACTIVE Active Active Active
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal spacing 1.27 mm 1.27 mm 1.27 mm 1.27 mm
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal location DUAL DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
memory width 8 8 8 8
organize 4M X 8 4MX8 4MX8 4MX8
storage density 3.36E7 deg 3.36E7 bit 3.36E7 bit 3.36E7 bit
operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Memory IC type FLASH 2.7V PROM FLASH FLASH FLASH
serial parallel SERIAL SERIAL SERIAL SERIAL
Number of digits 4M 4M 4M 4M
each_compli - Yes Yes Yes
ype - NOR TYPE NOR TYPE NOR TYPE
sub_category - Flash Memories Flash Memories Flash Memories
data_retention_time_mi - 20 20 20
endurance - 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
jesd_30_code - R-PDSO-G16 R-PDSO-G16 R-PDSO-G16
moisture_sensitivity_level - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
ckage_code - SOP SOP SOP
ckage_equivalence_code - SOP16,.4 SOP16,.4 SOP16,.4
eak_reflow_temperature__cel_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
wer_supplies__v_ - 3/3.3 3/3.3 3/3.3
gramming_voltage__v_ - 2.7 2.7 2.7
qualification_status - COMMERCIAL COMMERCIAL COMMERCIAL
seated_height_max - 2.65 mm 2.65 mm 2.65 mm
serial_bus_type - SPI SPI SPI
standby_current_max - 5.00E-5 Amp 5.00E-5 Amp 5.00E-5 Amp
Maximum supply voltage - 0.0200 Amp 0.0200 Amp 0.0200 Amp
Craftsmanship - CMOS CMOS CMOS
ime_peak_reflow_temperature_max__s_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
write_protecti - HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE
length - 10.3 mm 10.3 mm 10.3 mm
width - 7.5 mm 7.5 mm 7.5 mm
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