FDPF3860T — N-Channel PowerTrench® MOSFET
December 2013
FDPF3860T
Features
N-Channel PowerTrench
®
MOSFET
100 V, 20 A, 38.2 mΩ
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
• R
DS(on)
= 29.1 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 5.9 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Applications
• Consumer Appliances
• LCD/LED/PDP TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
G
D
S
G
TO-220F
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
C
Parameter
FDPF3860T
100
±20
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
o
C
- Continuous (T
C
= 25 C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate Above 25
o
20
12.7
80
278
20
3.4
15
33.8
0.27
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF3860T
3.7
62.5
Unit
o
C/W
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
1
www.fairchildsemi.com
FDPF3860T — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number
FDPF3860T
Top Mark
FDPF3860T
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250
μA,
V
GS
= 0 V, T
J
= 25
o
C
I
D
= 250
μA,
Referenced to 25
o
C
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 48 V, T
C
=
150
o
C
100
-
-
-
-
-
0.1
-
-
-
-
-
1
500
±100
V
V/
o
C
μA
nA
V
GS
= ±20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 5.9 A
V
DS
= 10 V, I
D
= 5.9 A
2.5
-
-
-
29.1
21
4.5
38.2
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-
-
-
1350
145
60
1800
190
90
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(tot)
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 80 V, I
D
= 5.9 A,
V
GS
= 10 V
V
DD
= 50 V, I
D
= 5.9 A,
V
GS
= 10 V, R
G
= 6
Ω
(Note 4)
-
-
-
-
-
-
(Note 4)
15
17
24
7
23
7
8
40
45
60
25
35
-
-
ns
ns
ns
ns
nC
nC
nC
-
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
SD
= 5.9 A
V
GS
= 0 V, I
SD
= 5.9 A,
dI
F
/dt = 100 A/μs
-
-
-
-
-
-
-
-
40
56
20
80
1.3
-
-
A
A
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 16 mH, I
AS
= 5.9 A, V
DD
= 50 V, R
G
= 25
Ω,
starting T
J
= 25°C.
3. I
SD
≤
5.9 A, di/dt
≤
200 A/μs, V
DD
≤
BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
2
www.fairchildsemi.com
FDPF3860T — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
Figure 2. Transfer Characteristics
200
100
I
D
,Drain Current[A]
I
D
,Drain Current[A]
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
150 C
-55 C
o
o
10
10
25 C
o
*Notes:
1. 250
μ
s Pulse Test
1
0.1
2. T
C
= 25 C
o
1
V
DS
,Drain-Source Voltage[V]
10
1
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
4
5
6
7
V
GS
,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.14
0.12
0.10
0.08
0.06
0.04
0.02
I
S
, Reverse Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
R
DS(ON)
[
Ω
]
,
Drain-Source On-Resistance
150 C
25 C
o
o
10
V
GS
= 10V
V
GS
= 20V
*Note: T
J
= 25 C
o
*Notes:
1. V
GS
= 0V
0
25
50
75
I
D
, Drain Current [A]
100
1
0.0
2. 250
μ
s Pulse Test
0.4
0.8
1.2
V
SD
, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
2000
C
iss
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 80V
V
DS
= 50V
V
DS
= 25V
1500
Capacitances [pF]
8
1000
C
oss
*Note:
1. V
GS
= 0V
2. f = 1MHz
6
4
500
C
rss
2
*Note: I
D
= 5.9A
0
0.1
1
10
V
DS
, Drain-Source Voltage [V]
30
0
0
5
10
15
20
Q
g
, Total Gate Charge [nC]
25
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
3
www.fairchildsemi.com
FDPF3860T — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. V
GS
= 10V
2. I
D
= 5.9A
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
0.8
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
Figure 9. Maximum Safe Operating Area
100
100
μ
s
Figure 10. Maximum Drain Current
vs. Case Temperature
25
I
D
, Drain Current [A]
I
D
, Drain Current [A]
100
10
1ms
20
15
1
Operation in This Area
is Limited by R
DS(on)
SINGLE PULSE
o
10ms
100ms
DC
10
0.1
T
C
= 25 C
T
J
= 150 C
R
θ
JC
= 3.7 C/W
o
o
5
0.01
0.1
1
10
V
DS
, Drain-Source Voltage [V]
0
25
50
75
100
125
o
T
C
, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
5
Z
θJC
(t), Thermal Response [
o
C/W]
Thermal Response
[
Z
θ
JC
]
0.5
1
0.2
0.1
0.05
P
DM
t
1
t
2
o
0.1
0.02
0.01
Single pulse
*Notes:
1. Z
θ
JC
(t) = 3.7 C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
-4
0.01
-5
10
10
10
-3
10
10
10
10
Rectangular
Pulse Duration [sec]
Pulse Duration [sec]
t
1
, Rectangular
-2
-1
0
1
10
2
10
3
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
4
www.fairchildsemi.com
FDPF3860T — N-Channel PowerTrench® MOSFET
I
G
= const.
Figure 12. Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
10V
R
L
V
DD
V
DS
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure 13. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. C5
5
www.fairchildsemi.com
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