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UPA1704G

Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size56KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA1704G Overview

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1704
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This
µ
PA1704 is N-Channel MOS Field Effect Transistor
designed for power management applications and Li-ion
battery application.
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
2.5-V gate drive and low on-resistance
1.44
R
DS(on)1
= 13 mΩ MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
R
DS(on)2
= 16 mΩ MAX. (V
GS
= 2.5 V, I
D
= 5.0 A)
Low C
iss
: C
iss
= 2700 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1704G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±12
±10
±40
2.0
150
–55 to + 150
2
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1 %
2.
Mounted on ceramic substrate of 1200 mm x 0.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D12908EJ1V1DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
©
1998, 1999

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