TPSMP13 thru TPSMP43A
Vishay Semiconductors
High Power Density Surface Mount Automotive
Transient Voltage Suppressors
Major Ratings and Characteristics
V
(BR)
P
PPM
I
FSM
T
j
max.
13 V to 43 V
400 W
40 A
185 °C
Features
•
•
•
•
•
•
•
•
Very low profile - typical heigth of 1.0 mm
Ideal for automated placement
Unidirection only
Exclusive patented PAR oxide passivated chip
construction
Excellent clamping capability
Low incremental surge resistance
Very fast response time
Meets MSL level 1, per J-STD-020C
DO-220AA (SMP)
• AEC-Q 101 qualified
Typical Applications
Protection for Ics, drive transistors, signal lines of sen-
sor units, and electronic units in consumer, computer,
inductrial, and automotive applications.
Maximum Ratings
T
A
= 25 °C, unless otherwise specified
N
ew
Parameter
Pr
od
uc
t
Mechanical Data
Symbol
P
PPM
I
PPM
I
FSM
VF
T
J,
T
STG
Value
Minimum 400
see table next page
40
2.5
-65 to +185
Case:
DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity:
Color band denotes the cathode end
Unit
W
A
A
V
°C
Peak power dissipation with a 10/1000 µs waveform
(1)(2)
Fig.3
Peak power pulse current with a 10/1000 µs waveform
(1)
Fig.1
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25A
(3)
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per fig.3 and derated above T
A
= 25°C per fig.2
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal
(3) Pulse test: 300 µs pulse width, 1% duty cycle
Document Number 88471
29-Nov-04
www.vishay.com
1
TPSMP13 thru TPSMP43A
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C, unless otherwise specified
Devise Type
Device Breakdown Voltage
Test
(1)
Marking
Current I
T
V
(BR)
at
I
T
Code
(mA)
V
Min
Max
Stand-off Maximum Maximum
Maximum Maximum Maximum
Voltage
Reverse
Reverse
Peak Pulse Clamping Temperature
V
WM
Leakage Leakage at
Surge
Voltage at Coefficient
at V
WM
V
WM
Current I
PPM
I
PPM
V
C
of V
(BR)
(Volts)
I
R
(µA) T
J
= 150 °C
(Note 2)
(Volts)
(%/°C)
(Amps)
I
D
(µA)
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.100
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
TPSMP13
TPSMP13A
TPSMP15
TPSMP15A
TPSMP16
TPSMP16A
TPSMP18
TPSMP18A
TPSMP20
TPSMP20A
TPSMP22
TPSMP22A
TPSMP24
TPSMP24A
TPSMP27
TPSMP27A
TPSMP30
TPSMP30A
TPSMP33
TPSMP33A
TPSMP36
TPSMP36A
TPSMP39
TPSMP39A
TPSMP43
TPSMP43A
AUP
AVP
AWP
AXP
AYP
AZP
BDP
BEP
BFP
BGP
BHP
BKP
BLP
BMP
BNP
BPP
BQP
BRP
BSP
BTP
BUP
BVP
BWP
BXP
BYP
BZP
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Notes:
(1) V
(BR)
measured after I
T
applied for 300 µs, I
T
= square wave pulse or equivalent
(2) Surge current waveform per Fig.3 and derated per Fig. 2
(3) All terms and symbols are consistant with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88471
29-Nov-04
TPSMP13 thru TPSMP43A
Vishay Semiconductors
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
100
T
A
= 25°C
Non-repetitive
pulse
waveform
shown in Fig. 3
10
10000
CJ, Junction Capacitance (pF)
P
PPM,
Peak Power (KW)
T
J
= 25°C
f = 1.0 MHz
Vsig
= 50mVp-p
1000
Measure at
Zero Bias
TPSMP10 - TPSMP43A
1.0
TPSMP6.8 - TPSMP9.1A
100
Measured at
Stand-Off
Voltage, V
WM
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
10
0
10
100
td, Pulse
Width,
sec.
V(BR)
Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
40
I
FSM,
Peak Forward Surge Current (A)
0
25
50
75
100
125
150
175
200
35
30
25
20
15
10
5
0
1
10
100
75
50
25
0
T
A
, Ambient Temperature (°C)
Number
of Cycles at 50 Hz
Figure 2. Pulse Derating Curve
Figure 5. Maximum Peak Forward Surge Current
150
I
PPM
– Peak Pulse Current,
%
I
RSM
tr = 10µsec.
Peak
Value
I
PPM
100
T
J
= 25°C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50% of I
PPM
Half
Value
– IPP
2
I
PPM
50
10/1000µsec.
Waveform
as defined
by
R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t – Time (ms)
Figure 3. Pulse Waveform
Document Number 88471
29-Nov-04
www.vishay.com
3
Analog electronics
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