ACPM-5205
UMTS Band5 (824-849MHz) 3x3mm Power Amplifier Module
Data Sheet
Description
The ACPM-5205 is a fully matched 10-pin surface mount
module developed for UMTS Band5. This power amplifier
module operates in the 824-849MHz bandwidth. The
ACPM-5205 meets stringent UMTS linearity requirements
up to 27.5dBm output power. The 3mmx3mm form factor
package is self contained, incorporating 50ohm input and
output matching networks. The PA also contains internal
DC blocking capacitors for RF input and output ports.
The ACPM-5205 features 5th generation of CoolPAM
(CoolPAM5) circuit technology which supports 3 power
modes – active bypass, mid power and high power modes.
The CoolPAM is stage bypass technology enhancing
PAE (power added efficiency) at low and medium power
range. The active bypass feature is added to CoolPAM5 to
enhance the PAE further at low output range and it enables
the PA to have exceptionally low quiescent current. It
dramatically saves the average power consumption and
accordingly extends the talk time of mobiles and prolongs
a battery life.
A directional coupler is integrated into the module and
both coupling and isolation ports are available exter-
nally, supporting daisy chain. The integrated coupler
has excellent coupler directivity, which minimizes the
coupled output power variation or delivered power
variation caused by the load mismatch from the antenna.
The coupler directivity, or the output power variation into
the mismatched load, is critical to the TRP and SAR per-
formance of the mobile phones in real field operations as
well as compliance tests for the system specifications.
The ACPM-5205 has integrated on-chip Vref and on-module
bias switch as the one of the key features of the CoolPAM-5,
so an external constant voltage source is not required,
eliminating the external LDO regulators and switches
from circuit boards of mobile devices. It also makes the PA
fully digital-controllable by the Ven pin that simply turns
the PA on and off from the digital control logic input from
baseband chipsets. All of the digital control input pins
such as the Ven, Vmode and Vbp are fully CMOS compat-
ible and can operate down to the 1.35V logic. The current
consumption by digital control pins is negligible.
Features
x
Thin Package (1.0mm typ)
x
Excellent Linearity
x
3-mode power control with Vbp and Vmode
– Bypass / Mid Power Mode / High Power Mode
x
High Efficiency at max output power
x
10-pin surface mounting package
x
Internal 50ohm matching networks for both RF input
and output
x
Integrated coupler
– Coupler and Isolation ports for daisy chain
x
Green (Lead-free and RoHS compliant)
Applications
x
UMTS Band5
Ordering Information
Part Number
ACPM-5205-TR1
ACPM-5205-BLK
Number of Devices
1000
100
Container
178mm (7”)
Tape/Reel
Bulk
Description (Cont.)
The power amplifier is manufactured on an advanced
InGaP HBT (hetero-junction Bipolar Transistor) MMIC
(microwave monolithic integrated circuit) technology
offering state-of-the-art reliability, temperature stability
and ruggedness.
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage.
Description
RF Input Power (Pin)
DC Supply Voltage (Vcc1, Vcc2)
Enable Voltage (Ven)
Mode Control Voltage (Vmode)
Bypass Control (Vbp)
Storage Temperature (Tstg)
0
0
0
0
-55
3.4
2.6
2.6
2.6
25
Min.
Typ.
Max.
10
5.0
3.3
3.3
3.3
+125
Unit
dBm
V
V
V
V
°C
Recommended Operating Condition
Description
DC Supply Voltage (Vcc1, Vcc2)
Enable Voltage (Ven)
Low
High
Mode Control Voltage (Vmode)
Low
High
Bypass Control Voltage (Vbp)
Low
High
Operating Frequency (fo)
Ambient Temperature (Ta)
0
1.35
824
-20
25
0
2.6
0.5
3.1
849
85
V
V
MHz
°C
0
1.35
0
2.6
0.5
3.1
V
V
0
1.35
0
2.6
0.5
3.1
V
V
Min.
3.2
Typ.
3.4
Max.
4.2
Unit
V
Operating Logic Table
Power Mode
High Power Mode
Mid Power Mode
Bypass Mode
Shut Down Mode
Ven
High
High
High
Low
Vmode
Low
High
High
Low
Vbp
Low
Low
High
Low
Pout (Rel99)
~ 27.5 dBm
~ 18 dBm
~ 12 dBm
–
Pout (HSDPA,
HSUPA MPR=0dB)
~ 26.5 dBm
~ 17 dBm
~ 11 dBm
–
2
Electrical Characteristics for WCDMA Mode
– Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm
– Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise.
Characteristics
Operating Frequency Range
Gain
Condition
High Power Mode, Pout=27.5dBm
Mid Power Mode, Pout=18dBm
Bypass Mode, Pout=12dBm
Min.
824
24
15.5
10
34.2
16.8
11.4
Typ.
–
27
19.5
14
39
23
15
423
79.5
29.1
Max.
849
Unit
MHz
dB
dB
dB
%
%
%
Power Added Efficiency
High Power Mode, Pout=27.5dBm
Mid Power Mode, Pout=18dBm
Bypass Mode, Pout=12dBm
Total Supply Current
High Power Mode, Pout=27.5dBm
Mid Power Mode, Pout=18dBm
Bypass Mode, Pout=12dBm
483
109.5
39.1
130
34
5.5
mA
mA
mA
mA
mA
mA
PA
PA
PA
PA
PA
PA
Quiescent Current
High Power Mode
Mid Power Mode
Bypass Mode
80
10
1
105
19
3.5
10
10
10
5
5
5
-42
-57
-40
-55
-41
-58
-40
-56
-42
-57
-40
-55
-38
-48
2.5:1
-135
-138
-140
17
2
Enable Current
High Power Mode
Mid Power Mode
Bypass Mode
Mode Control Current
Bypass Control Current
Total Current in Power-down mode
5 MHz offset
Adjacent Channel
10 MHz offset
Leakage Ratio
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
Harmonic
Second
Suppression
Third
Input VSWR
Stability (Spurious Output)
Rx Band Noise Power (Vcc=4.2V)
GPS Band Noise Power (Vcc=4.2V)
ISM Band Noise Power (Vcc=4.2V)
Phase Discontinuity
Mid Power Mode
Bypass Mode
Bypass
Ven=0V, Vmode=0V, Vbp=0V
High Power Mode, Pout=27.5dBm
High Power Mode, Pout=26.5dBm
(HSDPA, HSUPA MPR=0dB)
Mid Power Mode, Pout=18dBm
Mid Power Mode, Pout=17dBm
(HSDPA, HSUPA MPR=0dB)
Bypass Mode, Pout=12dBm
Bypass Mode, Pout=11dBm
(HSDPA, HSUPA MPR=0dB)
High Power Mode, Pout=27.5dBm
5
-36
-46
-35
-46
-36
-46
-36
-46
-36
-46
-36
-46
-35
-42
-60
PA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBm/Hz
dBm/Hz
dBm/Hz
deg
deg
VSWR
dB
dB
VSWR 5:1, All phase
High Power Mode, Pout=27.5dBm
High Power Mode, Pout=27.5dBm
High Power Mode, Pout=27.5dBm
bypass modelmid power mode,
at Pout=12dBm
mid power modelhigh power mode,
at Pout=18dBm
Pout<27.5dBm, Pin<5dBm, All phase
High Power Mode
RF Out to CPL port
ISO port to CPL port, Ven=Low
25
25
10:1
Ruggedness
Coupling factor
Daisy Chain Insertion Loss
20
0.15
3
HSDPA Signal configuration used:
3GPP TS 34.121-1
Annex C (normative e): Measurement channels
C.10.1 UL reference measurement channel for HSDPA tests
Table C.10.1.4:
E
values for transmitter characteristics tests with HS-DPCCH
Sub-test 2 (CM=1.0, MPR=0.0)
HSUPA signal configuration used:
3GPP TS 34.121-1
Annex C (normative): Measurement channels
C.11.1 UL reference measurement channel for E-DCH tests
Table C.11.1.3:
E
values for transmitter characteristics tests with HS-DPCCH and E-DCH Sub-test 1 (CM=1.0, MPR=0.0)
Footprint
All dimensions are in millimeter
(Tolerance of pad dimension: +/-0.05mm)
0.10
1.50
0.125
Pin 1
PIN Description
Pin #
1
2
3
Name
Vcc1
RFin
Vbp
Vmode
Ven
CPL
GND
ISO
RFOut
Vcc2
Description
DC Supply Voltage
RF Input
Bypass Control
Mode Control
PA Enable
Coupling port of Coupler
Ground
Isolation port of Coupler
RF Out
DC Supply Voltage
0.60
4
5
6
7
0.35
0.35
0.3
X-Ray Top View
0.10
8
9
10
0.25
4
Package Dimensions
All dimensions ae in millimeter
Pin 1 Mark
0.6
1
2
3
4
5
10
9
8
7
6
1.0 ± 0.1
3 ± 0.1
3 ± 0.1
Marking Specification
Pin 1 Mark
A5205
PYYWW
AAAAA
Manufacturing Part Number
Lot Number
P
Manufacturing Info
YY
Manufacturing Year
WW
Work Week
AAAAA Assembly Lot Number
5
京公网安备 11010802033920号
EEWORLD
