Preliminary
Datasheet
RJK0355DPA
30V, 30A, 10.7m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0916EJ0700
Rev.7.00
Mar 19, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note1
Ratings
30
±20
30
120
30
9
8.1
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0916EJ0700 Rev.7.00
Mar 19, 2013
Page 1 of 6
RJK0355DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
8.2
11.8
55
860
165
53
4.2
6.3
2.3
1.4
6.9
4.1
40.8
5.6
0.87
20
Max
—
± 0.1
1
2.5
10.7
16.5
—
—
—
—
—
—
—
—
—
—
—
—
1.14
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
10 V
R
L
= 0.66
Rg = 4.7
I
F
= 30 A, V
GS
= 0
Note4
I
F
=30 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0916EJ0700 Rev.7.00
Mar 19, 2013
Page 2 of 6
RJK0355DPA
Preliminary
Main Characteristics
Power
vs. Temperature
Derating
40
1000
Maximum
Safe
Operation
Area
Pch (W)
I
D
(A)
30
100
1
10
10
Channel
Dissipation
Drain
Current
m
20
10
PW
=
10 ms
Operation in
this area
is
limited by
R
DS(on)
s
0
μ
μ
s
s
D
C
O
n
t
i
o
ra
p
e
10
1
0
50
100
150
200
Tc =
25°C
0.1 1
shot
Pulse
0.1
1
10
100
Case Temperature
Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical Output Characteristics
20
4.5 V
10
V
3.2
V
Pulse
Test
20
Typical Transfer Characteristics
V
DS
=
10
V
Pulse
Test
I
D
(A)
12
3.0
V
I
D
(A)
Drain
Current
16
16
12
Drain
Current
8
2.8
V
4
8
25°C
Tc =
75°C
–25°C
4
V
GS
=
2.6
V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source
Voltage
V
DS
(V)
Gate to Source
Voltage
V
GS
(V)
Static Drain to Source
On
State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation
Voltage vs.
Gate to Source
Voltage
Drain to Source Saturation
Voltage
V
DS (on)
(mV)
200
Pulse
Test
Static Drain to Source
On
State Resistance
vs.
Drain
Current
100
Pulse
Test
150
30
V
GS
= 4.5 V
10
10
V
3
100
I
D
=
10 A
50
5A
2A
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source
Voltage
V
GS
(V)
Drain
Current
I
D
(A)
R07DS0916EJ0700 Rev.7.00
Mar 19, 2013
Page 3 of 6
RJK0355DPA
Static Drain to Source
On
State Resistance
vs. Temperature
50
Pulse
Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source
Voltage
Static Drain to Source
On
State Resistance
R
DS (on)
(mΩ)
Capacitance C
(pF)
40
1000
Ciss
300
100
30
V
GS
=
0
f =
1
MHz
10
20
Coss
Crss
30
I
D
=
2 A, 5 A, 10 A
20
V
GS
= 4.5 V
10
10
V
0
–25
0
25
50
2 A, 5 A, 10 A
75
100 125 150
10
0
30
Case Temperature
Tc
(
°
C)
Drain to Source
Voltage V
DS
(V)
Reverse Drain
Current vs.
Source to Drain
Voltage
V
GS
(V)
20
50
Dynamic
Input Characteristics
V
DS
(V)
50
40
V
DD
=
25
V
10
V
30
V
DS
16
Reverse Drain
Current I
DR
(A)
I
D
=
30 A
V
GS
10
V
40
5
V
Pulse
Test
Drain to Source
Voltage
12
Gate to Source
Voltage
30
20
8
20
V
GS
=
0,
–5 V
10
V
DD
=
25
V
10
V
0
8
16
24
32
4
10
0
40
0
0
0.4
0.8
1.2
1.6
2.0
Gate
Charge
Qg
(nc)
Source to Drain
Voltage V
SD
(V)
Maximum
Avalanche
Energy vs.
Channel Temperature
Derating
Repetitive Avalanche
Energy E
AR
(mJ)
20
I
AP
= 9
A
V
DD
=
15
V
duty
<
0.1
%
Rg
≥
50
Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch
(°C)
R07DS0916EJ0700 Rev.7.00
Mar 19, 2013
Page 4 of 6
RJK0355DPA
Normalized Transient Thermal Impedance
vs.
Pulse Width
Normalized Transient Thermal Impedance
γ
s
(t)
3
Tc = 25°C
1
Preliminary
D=1
0.5
0.3
0.2
0.1
5
0.0
1
s
h
o
t
p
ul
s
0.1
θch
– c (t) =
γ
s
(t) •
θch
– c
θch
– c = 5.0°C/W, Tc = 25°C
e
02
0.
01
0.
P
DM
PW
T
100
μ
1m
10 m
100 m
1
D=
PW
T
0.03
0.01
10
μ
10
Pulse Width PW (s)
Avalanche Test
Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
–
V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15
V
50
Ω
0
V
DD
Switching Time Test
Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10
V
Vin
Vout
Vin
10
V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
t
f
R07DS0916EJ0700 Rev.7.00
Mar 19, 2013
Page 5 of 6
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