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UPA1918TE

Description
3500mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size201KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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UPA1918TE Overview

3500mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN

UPA1918TE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeSC-95
package instructionSC-95, 6 PIN
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)3.5 A
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance0.19 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

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UPA1918TE UPA1918TE-T1 UPA1918TE-T2-A UPA1918TE-AT UPA1918TE-T2-AT
Description 3500mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN UPA1918TE-T1 TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3.5A I(D),TSOP TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3.5A I(D),TSOP TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3.5A I(D),TSOP
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code unknown unknown compliant compliant compliant
Is it Rohs certified? incompatible - conform to conform to conform to
Configuration SINGLE WITH BUILT-IN DIODE - Single Single Single
Maximum drain current (Abs) (ID) 3.5 A - 3.5 A 3.5 A 3.5 A
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Polarity/channel type P-CHANNEL - P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 2 W - 2 W 2 W 2 W
surface mount YES - YES YES YES
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