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CY7C264-55WMB

Description
8K x 8 Power-Switched and Reprogrammable PROM
File Size352KB,16 Pages
ManufacturerCypress Semiconductor
Download Datasheet View All

CY7C264-55WMB Overview

8K x 8 Power-Switched and Reprogrammable PROM

CY7C261
CY7C263/CY7C264
8K x 8 Power-Switched and Reprogrammable PROM
Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (commercial)
— 25 ns (military)
• Low power
— 660 mW (commercial)
— 770 mW (military)
• Super low standby power (7C261)
— Less than 220 mW when deselected
— Fast access: 20 ns
EPROM technology 100% programmable
Slim 300-mil or standard 600-mil packaging available
5V
±
10% V
CC
, commercial and military
Capable of withstanding greater than 2001V static dis-
charge
TTL-compatible I/O
Direct replacement for bipolar PROMs
Functional Description
The CY7C261, CY7C263, and CY7C264 are high-perfor-
mance 8192-word by 8-bit CMOS PROMs. When deselected,
the 7C261 automatically powers down into a low-power stand-
by mode. It is packaged in a 300-mil-wide package. The 7C263
and 7C264 are packaged in 300-mil-wide and 600-mil-wide
packages respectively, and do not power down when deselect-
ed. The reprogrammable packages are equipped with an era-
sure window; when exposed to UV light, these PROMs are
erased and can then be reprogrammed. The memory cells uti-
lize proven EPROM floating-gate technology and byte-wide in-
telligent programming algorithms.
The CY7C261, CY7C263, and CY7C264 are plug-in replace-
ments for bipolar devices and offer the advantages of lower
power, superior performance and programming yield. The
EPROM cell requires only 12.5V for the supervoltage and low
current requirements allow for gang programming. The
EPROM cells allow for each memory location to be tested
100%, as each location is written into, erased, and repeatedly
exercised prior to encapsulation. Each PROM is also tested for
AC performance to guarantee that after customer program-
ming the product will meet DC and AC specification limits.
Read is accomplished by placing an active LOW signal on CS.
The contents of the memory location addressed by the ad-
dress line (A
0
−A
12
) will become available on the output lines
(O
0
−O
7
).
Logic Block Diagram
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
O
1
POWER DOWN
(7C261)
COLUMN
ADDRESS
O
3
ADDRESS
DECODER
O
4
O
5
ROW
ADDRESS
PROGRAM–
MABLE
ARRAY
COLUMN
MULTI–
PLEXER
O
7
Pin Configurations
DIP/Flatpack
Top View
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8 7C261 17
7C263
9 7C264 16
10
15
11
14
12
13
V
CC
A
8
A
9
A
10
CS
A
11
A
12
O
7
O
6
O
5
O
4
O
3
O
6
LCC/PLCC (OpaqueOnly)
Top View
4 3 2 1 28 27 26
25
5
24
6
23
7C261
7
22
8
7C263
21
9
20
10
19
11
12 1314151617 18
O1
O2
GND
NC
O3
O4
O5
A5
A6
A7
NC
VCC
A8
A9
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
10
CS
A
11
A
12
NC
O
7
O
6
O
2
O
0
CS
For an 8K x 8 Registered PROM, see theCY7C265.
Cypress Semiconductor Corporation
Document #: 38-04010 Rev. **
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised March 4, 2002
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