DIM800NSM33-F000
Single Switch IGBT Module
Replaces DS5615-6
DS5615-7 September 2012 (LN29760)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free Construction
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
3300V
2.8V
800A
1600A
* Measured at the auxiliary terminals
APPLICATIONS
4(C)
C
2(C)
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
G
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM800NSM33-F000 is a single switch 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10μs short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
E
3(E)
1(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800NSM33-F000
Note: When ordering, please use the complete part
number
Outline type code: N
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800NSM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
Partial discharge – per module
2
Test Conditions
V
GE
= 0V
Max.
3300
±20
Units
V
V
A
A
W
kA s
V
pC
2
T
case
= 90°C
1ms, T
case
= 115°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 125ºC
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 3500V, V
2
= 2600V, 50Hz RMS
800
1600
10400
320
6000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance – transistor (per arm)
Thermal resistance – diode (per arm)
Thermal resistance – case to heatsink
(per module)
Junction temperature
Storage temperature range
AlN
AlSiC
33mm
20mm
350
Test Conditions
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting – M6
Screw torque
Electrical connections – M4
Electrical connections – M8
Min
-
-
-
-
-
-40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max
12
24
8
150
125
125
5
2
10
Units
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
Nm
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-F000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
†
†
Parameter
Collector cut-off current
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
Min
Typ
Max
4
60
1
Units
mA
mA
μA
V
V
V
A
A
V
V
nF
μC
nF
nH
μ
Gate leakage current
Gate threshold voltage
Collector-emitter saturation
voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT arm)
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
Internal resistance
V
GE
= ± 20V, V
CE
= 0V
I
C
= 80mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, T
j
= 125°C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
j
= 125°C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
5.5
6.5
2.8
3.6
800
1600
2.9
3.0
144
20
2.2
15
135
T
j
= 125°C, V
CC
= 2500V
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
7.0
C
ies
Q
g
C
res
L
M
R
INT
SC
Data
Short circuit current, I
SC
3700
A
Note:
†
Measured at the auxiliary terminals
*
L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800NSM33-F000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
I
C
= 800A
V
GE
= ±15V
V
CE
= 1800V
C
ge
= 220nF
L
S
~ 100nH
R
G(ON)
= 2.7,
R
G(OFF)
= 6.2
I
F
= 800A
V
CE
= 1800V
dI
F
/dt = 4000A/μs
R
G(ON)
= 3.9
R
G(OFF)
= 6.2
Test Conditions
Min
Typ.
3.02
270
1050
1300
275
1250
320
670
300
Max
Units
μs
ns
mJ
ns
ns
mJ
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
Min
Typ.
3.1
Max
Units
μs
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
I
C
= 800A
V
GE
= ±15V
V
CE
= 1800V
C
ge
= 220nF
L
S
~ 100nH
R
G(ON)
= 2.7,
R
G(OFF)
= 6.2
I
F
= 800A
V
CE
= 1800V
dI
F
/dt = 4000A/μs
R
G(ON)
= 3.9
R
G(OFF)
= 6.2
280
1200
1200
315
1750
600
800
600
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800NSM33-F000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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