ET4N60
600V, 4A, N-Channel Power MOSFET
Features
V
DSS
=600V
I
DS
=4A
R
DS(ON)
=2.5
Ω
R
DS(ON)
= (Max. 2.5
Ω)@V
GS
=10V.
Gate Charge (Typical 15nC).
Improved dv/dt Capability,
High Ruggedness.
100% Avalanche Tested.
Maximum Junction Temperature
Range(150
o
C).
Symbol
Applications
Switching Application
Adaptor
LED Lighting
Pin Description
Ordering Information
Part Number
ET4N60-220-T
ET4N60-220F-T
ET4N60-252-T
ET4N60-252-R
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Package
TO-220
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
G
G
G
G
1
Packing
Tube
Tube
Tube
Tape Reel
D
D
D
D
S
S
S
S
Copyright @ Estek Electronics Co., Ltd
Version 0.2
26 Sep 2011
ET4N60
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
Notes:
(1)..
(2)..
(3)..
Parameter
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25 °C)
Continuous Drain Current(@T
C
= 100 °C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation
(@T
C
= 25 °C)
TO-220
TO-220F
TO-252
Value
600
4.0
2.5
16
+30
240
10
4.5
105
33
50
-55~150
Units
V
A
A
A
V
mJ
mJ
V/ns
W
°C
Storage Temperature, Junction Temperature
Repeativity rating : pulse width limited by junction temperature
L = 27.5mH, I
AS
= 4.0 A, V
DD
= 50 V, R
G
= 25
Ω
, Starting T
J
= 25 °C
I
SD
≤
4.0 A, di/dt
≤
200 A/us, V
DD
≤
BV
DSS
, Starting T
J
= 25 °C
Thermal Characteristics
Symbol
Parameter
TO-220
TO-220F
TO-252
TO-220
TO-220F
TO-252
Value
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.18
3.79
2.5
62.5
62.5
83
°C/W
Units
R
θJC
Thermal Resistance,
Junction-to-Case
R
θJA
Thermal Resistance,
Junction-to-Ambient
Source-Drain Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Maximum Continuous Source-Drain Diode Forward Current
Maximum Pulsed Source-Drain Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 4.0 A, V
GS
= 0 V
I
S
= 4.0 A, V
GS
= 0 V,
dI
F
/dt = 100 A/us
Min.
-
-
-
-
-
Typ.
-
-
-
300
2.2
Max.
4.0
16
1.4
-
-
Units
A
V
ns
uC
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
26 Sep 2011
ET4N60
Electrical Characteristics
(T
C
=25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
V
GS
= 0 V,
I
D
= 250 uA
I
D
= 250 uA,
Referenced to
25 °C
V
DS
= 600 V,
V
GS
= 0 V
V
DS
= 480 V,
T
C
= 125 °C
V
GS
= 30 V,
V
DS
= 0 V
V
GS
= -30 V,
V
DS
= 0 V
V
DS
= V
GS
,
I
D
= 250 uA
V
GS
= 10 V,
I
D
= 2.0 A
V
GS
= 0 V,
V
DS
=25 V,
f = 1 MHz
V
DD
= 300 V,
I
D
= 4.0 A,
R
G
=25
Ω
Pulse Width
≤
300us,
V
DS
= 480 V,
V
GS
= 10 V,
I
D
= 4.0 A
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
600
-
-
V
-
0.6
-
V/°C
-
-
-
-
-
-
-
-
10
100
100
-100
uA
uA
nA
nA
I
DSS
Drain-Source Leakage Current
Gate-Source Leakage, Forward
I
GSS
Gate-source Leakage, Reverse
On Characteristics
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
2.0
-
-
2.0
4.0
2.5
V
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
-
-
-
-
-
-
-
-
-
545
60
8
10
35
45
40
15
2.8
6.2
710
80
11
30
80
100
90
20
-
-
nC
ns
pF
Dynamic Characteristics
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
26 Sep 2011
ET4N60
Typical Characteristics
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
26 Sep 2011
ET4N60
Typical Characteristics (Continued)
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
26 Sep 2011
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