BS616LV1622TCG55 datasheet, PDF

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BS616LV1622TCG55: DescriptionStandard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48; Categorystorage storage; File Size253KB，10 Pages; ManufacturerBrilliance; Environmental Compliance

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BS616LV1622TCG55 Overview

Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48

BS616LV1622TCG55 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Brilliance
package instruction	TSOP1, TSSOP48,.8,20
Reach Compliance Code	unknown
Maximum access time	55 ns
Other features	IT ALSO OPERATES AT 5.0 V NOMINAL SUPPLY VOLTAGE
Spare memory width	8
I/O type	COMMON
JESD-30 code	R-PDSO-G48
JESD-609 code	e1
length	18.4 mm
memory density	16777216 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	3/5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000005 A
Minimum standby current	1.5 V
Maximum slew rate	0.113 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	12 mm

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

1M x 16 or 2M x 8 bit switchable

DESCRIPTION

BS616LV1626

• Vcc operation voltage : 4.5 ~ 5.5V

• Very low power consumption :

Vcc = 5.0V C-grade: 113mA (@55ns) operating current

I -grade: 115mA (@55ns) operating current

C-grade: 90mA (@70ns) operating current

I -grade: 92mA (@70ns) operating current

15uA (Typ.) CMOS standby current

• High speed access time :

-55

55ns

-70

70ns

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

The BS616LV1626 is a high performance, very low power CMOS Static

Random Access Memory organized as 1,048,676 words by 16 bits or

2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc

range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 15uA at 5.0V/25

C and maximum access time of 55ns at 5.0V/85

C .

This device provide three control inputs and three states output drivers

for easy memory expansion.

The BS616LV1626 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1626 is available in 48-pin 12mmx20mm TSOP1 package.

PRODUCT FAMILY

OPERATING

TEMPERATURE

+0 C to +70 C

-40

C to +85

Vcc

RANGE

4.5V ~ 5.5V

SPEED

(ns)

55ns : 4.5~5.5V

70ns : 4.5~5.5V

POWER DISSIPATION

STANDBY

Operating

CCSB1

, Max)

PKG TYPE

Vcc=5V

55ns

Vcc=5V

70ns

BS616LV1626TC

BS616LV1626TI

55 / 70

110 uA

220 uA

113mA

115mA

90mA

92mA

TSOP1-48

(12mmx20mm)

TSOP1-48

(12mmx20mm)

PIN CONFIGURATIONS

/CE1

Vcc

CIO

Vss

A19

/WE

A18

A17

A16

A15

A14

/OE

/UB

/LB

CE2

SAE

D15

D14

D13

D12

Vss

Vcc

D11

D10

A10

A11

A12

A13

BLOCK DIAGRAM

A19

A15

A14

A13

A12

A11

A10

A17

Address

Input

Buffer

Row

Decoder

4096

Memory Array

4096 x 4096

BS616LV1626TC

BS616LV1626T I

4096

16(8)

Data

Input

Buffer

16(8)

Column I/O

D15

CE1

CE2

Write Driver

16(8)

Sense Amp

256(512)

Column Decoder

16(8)

Data

Output

Buffer

16(18)

Control

Address Input Buffer

48-pin 12mmx20mm TSOP1 top view

CIO

Vdd

Vss

A16 A0 A1 A2 A3 A4 A5 A18 (SAE)

Brilliance Semiconductor, Inc

. reserves the right to modify document contents without notice.

R0201-BS616LV1626

Revision 2.1

Jan.

2004

BS616LV1622TCG55 Related Products

	BS616LV1622TCG55	BS616LV1622TCP70	BS616LV1622TIP70	BS616LV1622TIG70
Description	Standard SRAM, 1MX16, 55ns, CMOS, PDSO48, TSOP1-48	Standard SRAM, 1MX16, 70ns, CMOS, PDSO48, TSOP1-48	Standard SRAM, 1MX16, 70ns, CMOS, PDSO48, TSOP1-48	Standard SRAM, 1MX16, 70ns, CMOS, PDSO48, TSOP1-48
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	55 ns	70 ns	70 ns	70 ns
Other features	IT ALSO OPERATES AT 5.0 V NOMINAL SUPPLY VOLTAGE	IT ALSO OPERATES AT 5.0 V NOMINAL SUPPLY VOLTAGE	IT ALSO OPERATES AT 5.0 V NOMINAL SUPPLY VOLTAGE	IT ALSO OPERATES AT 5.0 V NOMINAL SUPPLY VOLTAGE
Spare memory width	8	8	8	8
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
JESD-609 code	e1	e1	e1	e1
length	18.4 mm	18.4 mm	18.4 mm	18.4 mm
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Humidity sensitivity level	3	3	3	3
Number of functions	1	1	1	1
Number of terminals	48	48	48	48
word count	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	85 °C
organize	1MX16	1MX16	1MX16	1MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	3/5 V	3/5 V	3/5 V	3/5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum standby current	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Minimum standby current	1.5 V	1.5 V	1.5 V	1.5 V
Maximum slew rate	0.113 mA	0.09 mA	0.092 mA	0.092 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7)	Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7)	Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7)	Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
width	12 mm	12 mm	12 mm	12 mm
Base Number Matches	-	1	1	1

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