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IXGH28N30BS

Description
Insulated Gate Bipolar Transistor, 56A I(C), 300V V(BR)CES, N-Channel, TO-247SMD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size83KB,2 Pages
ManufacturerIXYS
Environmental Compliance  
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IXGH28N30BS Overview

Insulated Gate Bipolar Transistor, 56A I(C), 300V V(BR)CES, N-Channel, TO-247SMD, 3 PIN

IXGH28N30BS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeTO-247SMD
package instructionTO-247SMD, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFAST
Shell connectionCOLLECTOR
Maximum collector current (IC)56 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSFM-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)90 ns
Nominal on time (ton)15 ns

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