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IN4936

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size273KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

IN4936 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

IN4936 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETIC SEALED PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.2000 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
1N4933-1N4937
Fast Recovery Rectifier
DO-41
Features
Low cost construction
Fast switching for high efficency.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds/0.375
(9.5mm)lead length
at 5 lbs (2,3kg) tension
o
Mechanical Data
Case:
Transfer molded plastic
Polarity:
Color band denotes cathode end
Mounting position:
Any
Weight:
0.012 ounce,0.33 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load derate current by 20%.
SYMBOLS
IN4933 IN4934 IN4935 IN4936 IN4937
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375
(9.5mm) lead length at T
A
=75 C
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25 C
o
T
A
=100 C
o
o
o
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
V
olts
V
olts
V
olts
A
mp
I
FSM
V
F
I
R
30
1.2
5.0
100
200
2.0
15
50
A
mps
V
olts
A
mps
Maximum Reverse Rec very Time(NOTE3)
o
T
j
=25 C
Maximum Reverse Recovery Current(NOTE 3)
Typical Junction Capacitance(NOTE1)
Typical Thermal Resistance(NOTE2)
t
rr
I
RM(REC)
C
J
R
JA
n
S
A
mps
p
F
O
C/W
O
T
J
,T
STG
-65 to +150
Operating and Storage Temperature Range
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Thermal Resistance from Junction to Ambient at 0.375”(9.5mm) lead length,P.C.board mounted.
3.Reverse Recovery Test Conditions:I
F
=1.0A,V
R
=30V,di/dt=50A/ s,I
rr
=10% I
RM
for measurement of t
rr
.
C
http://www.luguang.cn
mail:lge@luguang.cn

IN4936 Related Products

IN4936 1N4933 IN4933 IN4934 IN4935 IN4937
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2 2 2
Number of components 1 1 1 1 1 1
Processing package description HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape round round round round round round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire Wire Wire Wire
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials Glass Glass Glass Glass Glass Glass
structure single single single single single single
Shell connection isolation isolation isolation isolation isolation isolation
Diode component materials silicon silicon silicon silicon silicon silicon
Diode type Signal diode Signal diode Signal diode Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.2000 us 0.2000 us 0.2000 us 0.2000 us 0.2000 us 0.2000 us
Maximum repetitive peak reverse voltage 50 V 50 V 50 V 50 V 50 V 50 V
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A
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