S29JL032H70TAI2130 datasheet, PDF

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S29JL032H70TAI2130: DescriptionFlash; Categorystorage storage; File Size2MB，58 Pages; ManufacturerCypress Semiconductor

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S29JL032H70TAI2130 Overview

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S29JL032H70TAI2130 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Reach Compliance Code	compliant
Memory IC Type	FLASH
Programming voltage	3 V

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S29JL032H

32 Mbit (4 M x 8-Bit/2 M x 16-Bit), 3 V

Simultaneous Read/Write Flash

Distinctive Characteristics



Simultaneous Read/Write Operations

– Data can be continuously read from one bank while executing

erase/program functions in another bank.

– Zero latency between read and write operations



Multiple Bank Architecture

– Four bank architectures available (refer to

Table on page 11).



Boot Sectors

– Top and bottom boot sectors in the same device

– Any combination of sectors can be erased



Manufactured on 0.13 µm Process Technology



Secured Silicon Sector:

Extra 256 Byte sector

–

Customer lockable:

One-time programmable only. Once locked,

data cannot be changed



Zero Power Operation

– Sophisticated power management circuits reduce power

consumed during inactive periods to nearly zero.



Compatible with JEDEC standards

– Pinout and software compatible with single-power-supply flash

standard

Package options



48-pin TSOP

Performance Characteristics



High Performance

– Access time as fast as 60 ns

– Program time: 4 µs/word typical using accelerated programming

function



Ultra Low Power Consumption (typical values)

– 2 mA active read current at 1 MHz

– 10 mA active read current at 5 MHz

General Description

The S29JL032H is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304

bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to

be programmed in-system with the standard 3.0 volt V

supply, and can also be programmed in standard EPROM programmers.

The device is available with an access time of 60, 70, or 90 ns and is offered in a 48-pin TSOP package. Standard control pins—

chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus

contention issues.

The device requires only a

single 3.0 volt power supply

for both read and write functions. Internally generated and regulated

voltages are provided for the program and erase operations.

Cypress Semiconductor Corporation

Document Number: 002-01186 Rev. *A

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

Cycling Endurance: 1 million cycles per sector typical



Data Retention: 20 years typical

Architectural Advantages

– 200 nA in standby or automatic sleep mode

Software Features



Supports Common Flash Memory Interface (CFI)



Erase Suspend/Erase Resume

– Suspends erase operations to read data from, or program data to,

a sector that is not being erased, then resumes the erase

operation.



Data# Polling and Toggle Bits

– Provides a software method of detecting the status of program or

erase cycles



Unlock Bypass Program Command

– Reduces overall programming time when issuing multiple

program command sequences

Hardware Features



Ready/Busy# Output (RY/BY#)

– Hardware method for detecting program or erase cycle

completion



Hardware Reset Pin (RESET#)

– Hardware method of resetting the internal state machine to the

read mode



WP#/ACC Input Pin

– Write protect (WP#) function protects the two outermost boot

sectors regardless of sector protect status

– Acceleration (ACC) function accelerates program timing



Sector Protection

– Hardware method to prevent any program or erase operation

within a sector

– Temporary Sector Unprotect allows changing data in protected

sectors in-system

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised December 08, 2015

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