74LVC3G04
Triple inverter
Rev. 01 — 4 May 2004
Product data sheet
1. General description
The 74LVC3G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device
and superior to most advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using I
off
. The I
off
circuitry
disables the output, preventing the damaging backflow current through the device when it
is powered down.
The 74LVC3G04 provides three inverting buffers.
2. Features
s
s
s
s
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
x
JESD8-7 (1.65 V to 1.95 V)
x
JESD8-5 (2.3 V to 2.7 V)
x
JESD8-B/JESD36 (2.7 V to 3.6 V).
ESD protection:
x
HBM EIA/JESD22-A114-B exceeds 2000 V
x
MM EIA/JESD22-A115-A exceeds 200 V.
±24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
SOT505-2 and SOT765-1 package
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.
s
s
s
s
s
s
s
Philips Semiconductors
74LVC3G04
Triple inverter
3. Quick reference data
Table 1:
Quick reference data
GND = 0 V; T
amb
= 25
°
C.
Symbol
t
PHL
, t
PLH
Parameter
propagation delay
inputs nA to output nY
Conditions
V
CC
= 1.8 V;
C
L
= 30 pF; R
L
= 1 kΩ
V
CC
= 2.5 V;
C
L
= 30 pF; R
L
= 500
Ω
V
CC
= 2.7 V;
C
L
= 50 pF; R
L
= 500
Ω
V
CC
= 3.3 V;
C
L
= 50 pF; R
L
= 500
Ω
V
CC
= 5.0 V;
C
L
= 50 pF; R
L
= 500
Ω
C
I
C
PD
[1]
Min
-
-
-
-
-
-
Typ
3.5
2.2
2.7
2.7
1.9
2.5
13.5
Max
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
pF
pF
input capacitance
power dissipation
capacitance
V
CC
= 3.3 V
[1] [2]
-
C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = total load switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
[2]
The condition is V
I
= GND to V
CC
.
4. Ordering information
Table 2:
Ordering information
Package
Temperature range Name
74LVC3G04DP
−40 °C
to +125
°C
74LVC3G04DC
−40 °C
to +125
°C
TSSOP8
VSSOP8
Description
plastic thin shrink small outline package; 8 leads; body
width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; body SOT765-1
width 2.3 mm
9397 750 13075
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2004
2 of 13
Philips Semiconductors
74LVC3G04
Triple inverter
5. Functional diagram
1
1
1A
1Y
7
1
7
3
2A
2Y
5
3
1
5
A
Y
mna110
6
3A
3Y
2
6
1
2
mna720
mna721
Fig 1. Logic symbol.
Fig 2. IEC logic symbol.
Fig 3. Logic diagram (one driver).
6. Pinning information
6.1 Pinning
1A
3Y
2A
GND
1
2
3
4
mna719
8
V
CC
1Y
3A
2Y
04
7
6
5
Fig 4. Pin configuration.
6.2 Pin description
Table 3:
Pin
1
2
3
4
5
6
7
8
Pin description
Symbol
1A
3Y
2A
GND
2Y
3A
1Y
V
CC
Description
data input
data output
data input
ground (0 V)
data output
data input
data output
supply voltage
9397 750 13075
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2004
3 of 13
Philips Semiconductors
74LVC3G04
Triple inverter
7. Functional description
7.1 Function table
Table 4:
Input
nA
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Output
nY
H
L
8. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
, I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input diode current
input voltage
output diode current
output voltage
output current
V
CC
or GND current
storage temperature
power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
-
−0.5
-
[1] [2]
[1] [2]
Max
+6.5
−50
+6.5
±50
+6.5
±50
±100
+150
300
Unit
V
mA
V
mA
V
mA
mA
°C
mW
V
O
> V
CC
or V
O
< 0 V
active mode
Power-down mode
V
O
= 0 V to V
CC
−0.5
−0.5
-
-
−65
V
CC
+ 0.5 V
T
amb
=
−40 °C
to +125
°C
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
9. Recommended operating conditions
Table 6:
Symbol
V
CC
V
I
V
O
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
active mode
Power-down mode;
V
CC
= 0 V
T
amb
t
r
, t
f
operating ambient
temperature
input rise and fall
times
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Conditions
Min
1.65
0
0
0
−40
0
0
Typ
-
-
-
-
-
-
-
Max
5.5
5.5
V
CC
5.5
+125
20
10
Unit
V
V
V
V
°C
ns/V
ns/V
9397 750 13075
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2004
4 of 13
Philips Semiconductors
74LVC3G04
Triple inverter
10. Static characteristics
Table 7:
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
[1]
V
IH
HIGH-level input
voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input
voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 100
µA;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
−100 µA;
V
CC
= 1.65 V to 5.5 V
I
O
=
−4
mA; V
CC
= 1.65 V
I
O
=
−8
mA; V
CC
= 2.3 V
I
O
=
−12
mA; V
CC
= 2.7 V
I
O
=
−24
mA; V
CC
= 3.0 V
I
O
=
−32
mA; V
CC
= 4.5 V
I
LI
I
off
I
CC
∆I
CC
C
I
V
IH
input leakage current
power-off leakage
current
quiescent supply
current
V
I
= 5.5 V or GND; V
CC
= 5.5 V
V
I
or V
O
= 5.5 V; V
CC
= 0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
V
CC
−
0.1
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
0.65
×
V
CC
1.7
2.0
0.7
×
V
CC
-
-
-
-
-
-
±0.1
±0.1
0.1
5
2.5
-
-
-
-
-
-
-
-
-
-
±5
±10
10
500
-
-
-
-
-
V
V
V
V
V
V
µA
µA
µA
µA
pF
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.45
0.3
0.4
0.55
0.55
V
V
V
V
V
V
0.65
×
V
CC
1.7
2.0
0.7
×
V
CC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.35
×
V
CC
0.7
0.8
0.3
×
V
CC
V
V
V
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
additional quiescent
V
I
= V
CC
−
0.6 V; I
O
= 0 A;
supply current per pin V
CC
= 2.3 V to 5.5 V
input capacitance
HIGH-level input
voltage
T
amb
=
−40 °C
to +125
°C
9397 750 13075
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2004
5 of 13
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