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HN3C56FU

Description
Audio Frequency General Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size189KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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HN3C56FU Overview

Audio Frequency General Purpose Amplifier Applications

HN3C56FU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
Base Number Matches1
HN3C56FU
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN3C56FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current
High h
FE
Excellent h
FE
linearity
: V
CEO
= 50V, I
C
= 150mA (max)
: h
FE
= 120~400
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
60
50
5
150
30
200
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
1.COLLECTOR1
2.EMITTER1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.BASE1
(C1)
(E2)
(C2)
(E2)
(B2)
(B1)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 130mW.
Note:
JEDEC
JEITA
TOSHIBA
2-2J1A
Weight: 0.0068mg (typ.)
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
=10mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MH
z
Min
120
60
Typ.
0.1
2
Max
0.1
0.1
400
0.25
Unit
μA
μA
V
MH
z
pF
Marking
6
5
4
Equivalent Circuit
(Top View)
6
Q1
5
4
38
1
2
3
1
2
Q2
3
1
2007-11-01

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