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P600G

Description
6 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size591KB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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P600G Overview

6 A, 400 V, SILICON, RECTIFIER DIODE

P600A-P600M
GENERAL PURPOSE RECTIFIERS
50V-1000V
6.0A
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 6.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
P600A
P600B
P600D
P600G
P600J
P600K
P600M
Unit
50
35
100
70
200
140
400
280
6.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
400
1.0
5.0
1.0
150
20
-50 to +150
-50 to +150
A
V
µA
mA
pF
K/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

P600G Related Products

P600G P600A P600B P600D P600J P600K P600M
Description 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE
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