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MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
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•
•
•
•
•
•
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability
−
100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
•
High Immunity to dv/dt
−
100 V/msec Minimum at 125°C
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12LD
MCR12LM
MCR12LN
On-State RMS Current
(180° Conduction Angles; T
C
= 80°C)
Average On-State Current
(180° Conduction Angles; T
C
= 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Forward Peak Gate Current
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
Value
Unit
V
400
600
800
12
7.6
100
41
5.0
0.5
2.0
−40
to 125
−40
to 150
A
A
A
A
2
sec
W
W
A
°C
°C
1
2
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
AY WW
MCR12LxG
AKA
3
TO−220AB
CASE 221A−09
STYLE 3
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
PIN ASSIGNMENT
1
2
3
4
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
MCR12LD
MCR12LDG
MCR12LM
MCR12LMG
MCR12LN
MCR12LNG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
Preferred
devices are recommended choices for future use
and best overall value.
October, 2008
−
Rev. 3
1
Publication Order Number:
MCR12L/D
MCR12LD, MCR12LM, MCR12LN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.2
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
D
= Rated V
DRM
and V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(I
TM
= 24 A)
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (V
D
= 12 V, Ig = 20 mA)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Critical Rate of Rise of On−State Current
IPK = 50 A; Pw = 40
msec;
diG/dt = 1 A/msec, Igt = 50 mA
2. Indicates Pulse Test: Pulse Width
v
1.0 ms, Duty Cycle
v
2%.
dv/dt
di/dt
100
−
250
−
−
50
V/ms
A/ms
V
TM
I
GT
I
H
I
L
V
GT
−
2.0
4.0
6.0
0.5
−
4.0
10
12
0.65
2.2
8.0
20
30
0.8
V
mA
mA
mA
V
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
−
−
−
−
0.01
2.0
mA
Symbol
Min
Typ
Max
Unit
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2
MCR12LD, MCR12LM, MCR12LN
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
10
VGT , GATE TRIGGER VOLTAGE (VOLTS)
5.0 20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110 125
9
GATE TRIGGER CURRENT (mA)
8
7
6
5
4
3
2
1
0
-40 -25 -10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40
-25
-10
5.0 20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110 125
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
100
100
I H, HOLDING CURRENT (mA)
10
IL , LATCHING CURRENT (mA)
5.0 20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110 125
10
1.0
-40 -25 -10
1.0
-40 -25 -10
50
65 80
T
J
, JUNCTION TEMPERATURE (°C)
5.0
20
35
95
110 125
Figure 3. Typical Holding Current
versus Junction Temperature
Figure 4. Typical Latching Current
versus Junction Temperature
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3
MCR12LD, MCR12LM, MCR12LN
P (AV), AVERAGE POWER DISSIPATION (WATTS)
125
120
TC, CASE TEMPERATURE (
°
C)
115
110
105
100
dc
95
α
= 30°
90
0
1
2
3
60°
90°
180°
11
12
5
7
9 10
4
6
8
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
α
α
= CONDUCTION ANGLE
20
18
16
α
14
α
= CONDUCTION ANGLE
α
= 30°
90°
180°
dc
12
10
8
6
4
2
0
0
1
T
J
= 125°C
2
3
4
5
6
7
8
9 10
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMPS)
11
12
Figure 5. Typical RMS Current Derating
Figure 6. On−State Power Dissipation
70
50
30
20
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
100
125
115
105
95
a
85
a
= Conduction
dc
10
7.0
5.0
3.0
2.0
125°C
25°C
Angle
1.0
a
= 30°
75
0
2.0
3.0
60°
4.0
5.0
90°
120° 180°
6.0
7.0
8.0
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
Figure 8. Average Current Derating
1.0
0.7
0.5
0.3
0.2
0.1
0.5
1.5
2.0
2.5
1.0
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
3.0
Figure 7. Typical On−State Characteristics
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