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UT6898: DescriptionN-CHANNEL ENHANCEMENT; File Size193KB，5 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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N-CHANNEL ENHANCEMENT

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UNISONIC TECHNOLOGIES CO., LTD

UT6898

N-CHANNEL ENHANCEMENT

DESCRIPTION

The

UT6898

uses advanced trench technology to provide

excellent R

DS(ON)

, low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

Power MOSFET

FEATURES

* R

DS(ON)

<18 mΩ@V

=2.5V

* R

DS(ON)

<14 mΩ@V

=4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

(7) (8)

(5) (6)

Lead-free:

UT6898L

Halogen-free: UT6898G

(2)

(4)

(1)

(3)

ORDERING INFORMATION

Normal

UT6898-S08-R

UT6898-S08-T

Ordering Number

Lead Free

UT6898L-S08-R

UT6898L-S08-T

Halogen Free

UT6898G-S08-R

UT6898G-S08-T

Package

SOP-8

Packing

Tape Reel

Tube

www.unisonic.com.tw

1 of 5

QW-R502-239.A

UT6898 Related Products

	UT6898	UT6898-S08-R	UT6898-S08-T	UT6898G-S08-T	UT6898L-S08-R	UT6898L-S08-T
Description	N-CHANNEL ENHANCEMENT	N-CHANNEL ENHANCEMENT	N-CHANNEL ENHANCEMENT	N-CHANNEL ENHANCEMENT	N-CHANNEL ENHANCEMENT	N-CHANNEL ENHANCEMENT
Maker	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	-	SOT	SOT	SOT	SOT	SOT
package instruction	-	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	-	8	8	8	8	8
Reach Compliance Code	-	compli	compli	compli	compli	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	20 V	20 V	20 V	20 V	20 V
Maximum drain current (ID)	-	9.4 A	9.4 A	9.4 A	9.4 A	9.4 A
Maximum drain-source on-resistance	-	0.014 Ω	0.014 Ω	0.014 Ω	0.014 Ω	0.014 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	-	2	2	2	2	2
Number of terminals	-	8	8	8	8	8
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	38 A	38 A	38 A	38 A	38 A
surface mount	-	YES	YES	YES	YES	YES
Terminal form	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	-	1	1	1	1	1

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