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UT6898-S08-T

Description
N-CHANNEL ENHANCEMENT
CategoryDiscrete semiconductor    The transistor   
File Size193KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

UT6898-S08-T Overview

N-CHANNEL ENHANCEMENT

UT6898-S08-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)9.4 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)38 A
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The
UT6898
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
<18 mΩ@V
GS
=2.5V
* R
DS(ON)
<14 mΩ@V
GS
=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
Lead-free:
UT6898L
Halogen-free: UT6898G
(2)
G1
(4)
G2
S1
(1)
S2
(3)
ORDERING INFORMATION
Normal
UT6898-S08-R
UT6898-S08-T
Ordering Number
Lead Free
UT6898L-S08-R
UT6898L-S08-T
Halogen Free
UT6898G-S08-R
UT6898G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-239.A

UT6898-S08-T Related Products

UT6898-S08-T UT6898 UT6898-S08-R UT6898G-S08-T UT6898L-S08-R UT6898L-S08-T
Description N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code SOT - SOT SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 - SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 - 8 8 8 8
Reach Compliance Code compli - compli compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V - 20 V 20 V 20 V 20 V
Maximum drain current (ID) 9.4 A - 9.4 A 9.4 A 9.4 A 9.4 A
Maximum drain-source on-resistance 0.014 Ω - 0.014 Ω 0.014 Ω 0.014 Ω 0.014 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 2 - 2 2 2 2
Number of terminals 8 - 8 8 8 8
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 38 A - 38 A 38 A 38 A 38 A
surface mount YES - YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1 1
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