EEWORLDEEWORLDEEWORLD

Part Number

Search

UT6898G-S08-T

Description
N-CHANNEL ENHANCEMENT
CategoryDiscrete semiconductor    The transistor   
File Size193KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
Download Datasheet Parametric Compare View All

UT6898G-S08-T Overview

N-CHANNEL ENHANCEMENT

UT6898G-S08-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)9.4 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)38 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The
UT6898
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
<18 mΩ@V
GS
=2.5V
* R
DS(ON)
<14 mΩ@V
GS
=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
Lead-free:
UT6898L
Halogen-free: UT6898G
(2)
G1
(4)
G2
S1
(1)
S2
(3)
ORDERING INFORMATION
Normal
UT6898-S08-R
UT6898-S08-T
Ordering Number
Lead Free
UT6898L-S08-R
UT6898L-S08-T
Halogen Free
UT6898G-S08-R
UT6898G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-239.A

UT6898G-S08-T Related Products

UT6898G-S08-T UT6898 UT6898-S08-R UT6898-S08-T UT6898L-S08-R UT6898L-S08-T
Description N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT
Maker UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code SOT - SOT SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 - SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 - 8 8 8 8
Reach Compliance Code compli - compli compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V - 20 V 20 V 20 V 20 V
Maximum drain current (ID) 9.4 A - 9.4 A 9.4 A 9.4 A 9.4 A
Maximum drain-source on-resistance 0.014 Ω - 0.014 Ω 0.014 Ω 0.014 Ω 0.014 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 2 - 2 2 2 2
Number of terminals 8 - 8 8 8 8
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 38 A - 38 A 38 A 38 A 38 A
surface mount YES - YES YES YES YES
Terminal form GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1 1
Happy new year~~~ Although it's a little late
Happy new year~~~~~ This is probably the latest blessing post:lol If you think the following is interesting, please give it a thumbs up~~~~~~ [url=http://it.nankai.edu.cn/ITEMIS/Information/FileUpload...
open82977352 Talking
How to connect the freewheeling diode
How to connect the freewheeling diode? If it is connected as shown in the picture, it should not be removed. If it is not connected, the reverse voltage will cause the VS voltage to increase....
ena Discrete Device
Question + MSP430 uses its own AD measurement inaccurately
I used the MSP4301612 chip, connected to a 4096 reference voltage, and measured a DC voltage. The LCD range was 200MV. It kept jumping, while the range of change when using MAX187 and other AD acquisi...
youluo Microcontroller MCU
Design Techniques for Planar UWB Antennas for Communications
Since the UWB (Ultra Wide Band) system uses a broadband of more than 500MHz to transmit data at high speed, the UWB antenna must have good frequency characteristics. In recent years, OFDM (Orthogonal ...
JasonYoo RF/Wirelessly
Can you help me see if this website can be opened in China?
[url=http://www.godaddy.com]http://www.godaddy.com[/url] Can someone from different places help me check if all the places are blocked? Sigh, they always say firewall issues. Thanks. [[i] This post wa...
wangfuchong Talking
Regarding the recent news about nuclear radiation in Fukushima, Japan, share a related popular science video
Recently, news about nuclear radiation in Fukushima, Japan has been all over my friend circle. It is said that the highest radiation can kill people in tens of seconds. Here is a short video to share ...
eric_wang Talking

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2146  2521  2426  202  2586  44  51  49  5  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号