UNISONIC TECHNOLOGIES CO., LTD
UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The
UT6898
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
Power MOSFET
FEATURES
* R
DS(ON)
<18 mΩ@V
GS
=2.5V
* R
DS(ON)
<14 mΩ@V
GS
=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
Lead-free:
UT6898L
Halogen-free: UT6898G
(2)
G1
(4)
G2
S1
(1)
S2
(3)
ORDERING INFORMATION
Normal
UT6898-S08-R
UT6898-S08-T
Ordering Number
Lead Free
UT6898L-S08-R
UT6898L-S08-T
Halogen Free
UT6898G-S08-R
UT6898G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-239.A
UT6898
PIN CONFIGURATION
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-239.A
UT6898
SOLUTE MAXIMUM RATINGS
(T
A
=25℃, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±12
V
Continuous Drain Current
I
D
9.4
A
Pulsed Drain Current
I
DM
38
A
Maximum Power Dissipation
2
W
P
D
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Case
SYMBOL
θ
JC
MIN
TYP
40
MAX
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
GS
=0V, V
DS
=16V
V
GS
=±12V, V
DS
=0V,
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5 V, V
DS
=5V,
V
GS
=4.5V, I
D
=9.4A
V
GS
=2.5V, I
D
=8.3A
MIN
20
1
±100
0.5
19
1
10
13
1.5
14
18
TYP
MAX UNIT
V
µA
nA
V
A
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1821
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
C
OSS
440
Reverse Transfer Capacitance
C
RSS
208
SWITCHING PARAMETERS
(Note 1)
Turn-ON Delay Time
t
D(ON)
10
20
Turn-ON Rise Time
t
R
15
27
V
GS
=4.5V,V
DS
=10V,I
D
=1A
R
GEN
=6Ω
Turn-OFF Delay Time
t
D(OFF)
34
55
Turn-OFF Fall-Time
t
F
16
29
Total Gate Charge
Q
G
16
23
V
GS
=4.5V, V
DS
=10V,
Gate Source Charge
Q
GS
3
I
D
=9.4A
4
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1.3A (Note 1)
1.3
Maximum Continuous Drain-Source Diode
I
S
0.7
1.2
Forward Current
Notes: 1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2. The diode connected between the gate and source serves only as protection against ESD. No gate
overvoltage rating is implied
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QW-R502-239.A
UT6898
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
1400
1200
1000
800
600
400
200
0
Power MOSFET
Switching Time Waveforms
V
DS
90%
V
GS
10%
t
D(ON)
t
THL
t
D(OFF)
t
TLH
0
200
400
600
800
Source to Drain Voltage,V
SD
(mV)
Drain-Source
On-State Resistance Characteristics
12
10
4.5V
Drain Current, I
D
(A)
8
V
GS
=2.5V
6
4
2
0
0
50
100
150
200
Drain to Source Voltage, V
DS
(mV)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-239.A
UT6898
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-239.A
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