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12N80

Description
12A, 800V N-CHANNEL POWER MOSFET
File Size195KB,6 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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12N80 Overview

12A, 800V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
12N80
Preliminary
Power MOSFET
12A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
12N80
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology is specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC
12N80
is universally applied in high efficiency switch
mode power supply.
1
TO-220
1
TO-220F1
FEATURES
* R
DS(on)
= 0.9Ω @V
GS
= 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N80L-TA3-T
12N80G-TA3-T
12N80L-TF1-T
12N80G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-594.b

12N80 Related Products

12N80 12N80G-TA3-T 12N80L-TA3-T
Description 12A, 800V N-CHANNEL POWER MOSFET 12A, 800V N-CHANNEL POWER MOSFET 12A, 800V N-CHANNEL POWER MOSFET
Is it Rohs certified? - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - TO-220AB TO-220AB
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 3 3
Reach Compliance Code - compli compli
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 800 V 800 V
Maximum drain current (Abs) (ID) - 12 A 12 A
Maximum drain current (ID) - 12 A 12 A
Maximum drain-source on-resistance - 0.9 Ω 0.9 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 225 W 225 W
Maximum pulsed drain current (IDM) - 48 A 48 A
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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