®
BYT71(F)-800
FAST RECOVERY RECTIFIER DIODES
.
.
.
FEATURES
HIGH VOLTAGE CAPABILITY
FAST AND SOFT RECOVERY
INSULATED PACKAGE :
insulating voltage = 2000V
DC
capacitance = 12 pF
K
A
K
A
DESCRIPTION
Single chip rectifier suited for power conversion
and polarity protection applications.
This device is packaged in TO220AC and in
ISOWATT220AC.
TO220AC
(Plastic)
ISOWATT220AC
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
IF(RMS)
IF(AV)
RMS on-state current
Average forward current
δ
= 0.5
TO220AC
ISOWATT220AC
Tc=130°C
Tc=105°C
tp=10ms
sinusoidal
Parameter
Value
12
6
6
90
- 65 to + 150
- 65 to + 150
A
°C
°C
Unit
A
A
IFSM
Tstg
Tj
Surge non repetitive forward current
Storage and junction temperature range
Symbol
Parameter
BYT71-(F)
600
800
800
Unit
VRRM
Repetitive peak off-state voltage
600
V
August 1998 Ed : 3A
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BYT71(F)-800
THERMAL RESISTANCES
Symbol
Rth (j-c)
Junction to case
Parameter
TO220AC
ISOWATT220AC
Value
2.3
4.9
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
IR **
Tj = 25°C
Tj = 100°C
VF *
Tj = 100°C
Tj = 25°C
IF = 6 A
Test Conditions
VR = VRRM
Min.
Typ.
Max.
20
1
1.3
1.4
Unit
µA
mA
V
IF = 6 A
Pulse test : * tp = 380
µs,
duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
Test Conditions
IF = 1A
VR = 30V
dIF/dt = -15A/µs
Min.
Typ.
Max.
300
Unit
ns
To evaluate the conduction losses use the following equations :
P = 1.15 x IF(AV) + 0.025 x IF2(RMS)
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BYT71(F)-800
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.2
=0.1
=0.05
P=7.5W
P=10W
=tp/T
tp
I
M
Fig.2 :
Peak current versus form factor.
I M(A)
=0.5
=1
T
T
P=5W
I F(av)(A)
=tp/T
tp
Fig.3 :
Forward voltage drop versus forward current
(maximum values).
V FM(V)
Tj=100
O
C
I FM(A)
Fig.4 :
Relative variation of thermal impedance junction
to case versus pulse duration.
(TO 220 AC)
K=Zth(j-c)/Rth(j-c)
Fig.5 :
Relative variation of thermal impedance junction
to case versus pulse duration.
(ISOWATT220AC)
K=Zth(j-c)/Rth(j-c)
=0.5
=0.5
=0.2
=0.2
=0.1
T
T
=0.1
SINGLE PULSE
=tp/T
tp
SINGLE PULSE
tp(s)
=tp/T
tp
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BYT71(F)-800
Fig.6 :
Non repetitive surge peak forward current versus
overload duration.
(TO 220 AB)
Fig.7 :
Non repetitive surge peak forward current versus
overload duration.
(ISOWATT220AB)
I M(A)
IM
IM
=0.5
=0.5
t(s)
t(s)
Fig.8 :
Average current versus ambient temperature.
(duty cycle : 0.5) (TO 220 AB)
I F(av)(A)
Fig.9 :
Average current versus ambient temperature.
(duty cycle : 0.5) (ISOWATT220AB)
I F(av)(A)
8
7
6
5
4
3
2
1
8
7
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
6
5
=0.5
Rth(j-a)=15
o
C/W
Rth(j-a)=15
o
C/W
T
4
3
2
=0.5
T
=tp/T
tp
Tamb( oC)
1
150
=tp/T
tp
Tamb( oC)
0
0
25
50
75
100
125
0
0
25
50
75
100
125
150
Fig.10 :
Junction capacitance versus reverse voltage
applied (Typical values).
Fig.11 :
Recovery charges versus dIF/dt.
C(pF)
F=1Mhz Tj=25
O
C
90% CONFIDENCE
Tj=100
C
V R(V)
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BYT71(F)-800
Fig.12 :
Peak reverse current versus dIF/dt.
Fig.13 :
Dynamic
temperature.
parameters
versus
junction
I RM(A)
90% CONFIDENCE
Tj=100
o
C
QRR;IRM[Tj]/QRR;IRM[Tj=100
o
C ]
IF=IF(av)
dIF/dt(A/us)
Tj(
o
C)
Fig.14 :
Peak forward voltage versus dIF/dt.
Fig.15 :
Recovery time versus dIF/dt.
40
35
30
25
20
15
10
5
V FP(V)
90% CONFIDENCE
Tj=100
o
C
2.00
1.75
IF=IF(av)
t fr(us)
90% CONFIDENCE
Tj=100
o
C
1.50
1.25
1.00
0.75
0.50
IF=IF(av)
dIF/dt(A/us)
10
20
30
40
50
60
70
80
90 100
0.25
0.00
0
10
20
30
dIF/dt(A/us)
40
50
60
70
80
90 100
0
0
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