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D10SB80

Description
3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size131KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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D10SB80 Overview

3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

SIYU
R
塑封硅整流桥堆
反向电压
200---800V
正向电流
10 A
D5
3.0*45
0
D10SB20......D10SB80
Single-phase Silicon Bridge Rectifier
Reverse Voltage 200 to 800V
Forward Current 10A
特征
Features
4.8
4.4
3.8
3.4
·反向漏电流½
Low reverse leakage
High forward surge capability
Surge
overload rating: 150 Amperes peak
11.2
10.8
30.3
29.7
·正向浪涌承受½力较强
¢3.4
¢3.1
·浪涌承受½力:150A
2.7
2.3
2.4
2.0
+
~
~
-
2.9
2.5
4.2
3.8
18.0
17.0
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
4.8
20.3
19.7
1.1
0.9
0.7
0.6
机械数据
Mechanical Data
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
Mounting Position: Any
·安装扭距:
推荐值
0.5牛*米
Mounting torque:
Recommend 0.5 N*m
10.2
9.8
7.7
7.3
7.7
7.3
Unit:mm
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
TC =100℃
最大正向平均整流电流
Maximum average forward rectified current
Ratings at 25℃ ambient temperature unless otherwise specified.
D10SB20
200
140
200
D10SB40 D10SB60
400
280
400
10
150
22
600
420
600
D10SB80
800
560
800
单½
Unit
V
V
V
A
A
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θj-a
Tj, TSTG
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-55--- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
D10SB20 D10SB40 D10SB60
1.1
10
500
40
D10SB80
单½
Unit
V
μA
I
F
= 5.0A
TA= 25℃
TA = 125℃
V
F
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
pF
大昌电子
DACHANG ELECTRONICS

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