FM25V02-DGTR datasheet, PDF - EEWORLD Datasheet

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FM25V02-DGTR: DescriptionSPECIALTY MEMORY CIRCUIT, PDSO8; Categorystorage storage; File Size334KB，17 Pages; ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation); Websitehttp://www.cypress.com/; Environmental Compliance

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FM25V02-DGTR Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25V02-DGTR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code	DFN
package instruction	HVSON, SOLCC8,.16,37
Contacts	8
Reach Compliance Code	unknow
JESD-30 code	R-PDSO-N8
JESD-609 code	e3
length	4.5 mm
memory density	262144 bi
Memory IC Type	MEMORY CIRCUIT
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	8
word count	32768 words
character code	32000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.16,37
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	0.85 mm
Maximum standby current	0.00015 A
Maximum slew rate	0.0025 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	NO LEAD
Terminal pitch	0.95 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	4 mm

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Pre-Production

FM25V02

256Kb Serial 3V F-RAM Memory

Features

256K bit Ferroelectric Nonvolatile RAM

•

Organized as 32,768 x 8 bits

•

High Endurance 100 Trillion (10

) Read/Writes

•

10 Year Data Retention

•

NoDelay™ Writes

•

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

•

Up to 40 MHz Frequency

•

Direct Hardware Replacement for Serial Flash

•

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

•

Hardware Protection

•

Software Protection

Device ID and Serial Number

•

Device ID reads out Manufacturer ID & Part ID

•

Unique Serial Number (FM25VN02)

Low Voltage, Low Power

•

Low Voltage Operation 2.0V – 3.6V

•

µA

Standby Current (typ.)

•

µA

Sleep Mode Current (typ.)

Industry Standard Configurations

•

Industrial Temperature -40°C to +85°C

•

8-pin “Green”/RoHS SOIC Package

•

8-pin “Green”/RoHS TDFN Package

Description

The FM25V02 is a 256-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by Serial

Flash and other nonvolatile memories.

Unlike Serial Flash, the FM25V02 performs write

operations at bus speed. No write delays are incurred.

Data is written to the memory array immediately

after it has been transferred to the device. The next

bus cycle may commence without the need for data

polling. The product offers very high write

endurance, orders of magnitude more endurance than

Serial Flash. Also, F-RAM exhibits lower power

consumption than Serial Flash.

These capabilities make the FM25V02 ideal for

nonvolatile memory applications requiring frequent

or rapid writes or low power operation. Examples

range from data collection, where the number of

write cycles may be critical, to demanding industrial

controls where the long write time of Serial Flash can

cause data loss.

The FM25V02 provides substantial benefits to users

of Serial Flash as a hardware drop-in replacement.

The devices use the high-speed SPI bus, which

enhances the high-speed write capability of F-RAM

technology. The FM25VN02 is offered with a unique

This is a product in the pre-production phase of development. Device

characterization is complete and Ramtron does not expect to change the

specifications. Ramtron will issue a Product Change Notice if any

specification changes are made.

Rev. 2.0

May 2010

serial number that is read-only and can be used to

identify a board or system. Both devices incorporate

a read-only Device ID that allows the host to

determine the manufacturer, product density, and

product revision. The devices are guaranteed over an

industrial temperature range of -40°C to +85°C.

Pin Configuration

VSS

VDD

HOLD

VSS

VDD

/HOLD

Top View

Pin Name

/HOLD

VDD

VSS

Function

Chip Select

Write Protect

Hold

Serial Clock

Serial Data Input

Serial Data Output

Supply Voltage

Ground

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Page 1 of 17

FM25V02-DGTR Related Products

	FM25V02-DGTR	FM25V02	FM25V02-DG	FM25VN02-G	FM25VN02-GTR
Description	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of terminals	8	8	8	8	8
Maximum operating temperature	85 °C	85 Cel	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 Cel	-40 °C	-40 °C	-40 °C
organize	32KX8	32K × 8	32KX8	32KX8	32KX8
surface mount	YES	Yes	YES	YES	YES
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	NO LEAD	NO	NO LEAD	GULL WING	GULL WING
Terminal location	DUAL	pair	DUAL	DUAL	DUAL
Is it lead-free?	Lead free	-	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	-	conform to	conform to	conform to
Maker	Ramtron International Corporation (Cypress Semiconductor Corporation)	-	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code	DFN	-	DFN	SOIC	SOIC
package instruction	HVSON, SOLCC8,.16,37	-	HVSON, SOLCC8,.16,37	SOP, SOP8,.25	SOP, SOP8,.25
Contacts	8	-	8	8	8
Reach Compliance Code	unknow	-	unknow	unknow	unknow
JESD-30 code	R-PDSO-N8	-	R-PDSO-N8	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	-	e3	e3	e3
length	4.5 mm	-	4.5 mm	4.9 mm	4.9 mm
memory density	262144 bi	-	262144 bi	262144 bi	262144 bi
Memory IC Type	MEMORY CIRCUIT	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
Humidity sensitivity level	1	-	1	1	1
word count	32768 words	-	32768 words	32768 words	32768 words
character code	32000	-	32000	32000	32000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	HVSON	-	HVSON	SOP	SOP
Encapsulate equivalent code	SOLCC8,.16,37	-	SOLCC8,.16,37	SOP8,.25	SOP8,.25
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	-	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	260	260
power supply	3.3 V	-	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	0.85 mm	-	0.85 mm	1.75 mm	1.75 mm
Maximum standby current	0.00015 A	-	0.00015 A	0.00015 A	0.00015 A
Maximum slew rate	0.0025 mA	-	0.0025 mA	0.0025 mA	0.0025 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2 V	-	2 V	2 V	2 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	3.3 V
technology	CMOS	-	CMOS	CMOS	CMOS
Terminal surface	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN
Terminal pitch	0.95 mm	-	0.95 mm	1.27 mm	1.27 mm
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	4 mm	-	4 mm	3.9 mm	3.9 mm

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