IC,LOGIC GATE,3 3-INPUT NAND,CMOS, RAD HARD,DIP,14PIN,CERAMIC
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| package instruction | DIP, DIP14,.3 |
| Reach Compliance Code | not_compliant |
| JESD-30 code | R-XDIP-T14 |
| JESD-609 code | e0 |
| Load capacitance (CL) | 50 pF |
| Logic integrated circuit type | NAND GATE |
| MaximumI(ol) | 0.004 A |
| Number of terminals | 14 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP14,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| power supply | 5 V |
| Prop。Delay @ Nom-Sup | 26 ns |
| Certification status | Not Qualified |
| Schmitt trigger | NO |
| Filter level | 38535V;38534K;883S |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| total dose | 1M Rad(Si) V |
| HCTS10DMSH | 5962R9576501VCC | 5962R9576501VXC | HCTS10KMSH | |
|---|---|---|---|---|
| Description | IC,LOGIC GATE,3 3-INPUT NAND,CMOS, RAD HARD,DIP,14PIN,CERAMIC | HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDIP14, CERAMIC, DIP-14 | HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDFP14 | IC,LOGIC GATE,3 3-INPUT NAND,CMOS, RAD HARD,FP,14PIN,CERAMIC |
| package instruction | DIP, DIP14,.3 | DIP, DIP14,.3 | DFP, FL14,.3 | DFP, FL14,.3 |
| Reach Compliance Code | not_compliant | unknown | unknown | not_compliant |
| JESD-30 code | R-XDIP-T14 | R-CDIP-T14 | R-CDFP-F14 | R-XDFP-F14 |
| JESD-609 code | e0 | e4 | e4 | e0 |
| Load capacitance (CL) | 50 pF | 50 pF | 50 pF | 50 pF |
| Logic integrated circuit type | NAND GATE | NAND GATE | NAND GATE | NAND GATE |
| MaximumI(ol) | 0.004 A | 0.004 A | 0.004 A | 0.004 A |
| Number of terminals | 14 | 14 | 14 | 14 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC |
| encapsulated code | DIP | DIP | DFP | DFP |
| Encapsulate equivalent code | DIP14,.3 | DIP14,.3 | FL14,.3 | FL14,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | FLATPACK | FLATPACK |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Prop。Delay @ Nom-Sup | 26 ns | 24 ns | 24 ns | 26 ns |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Schmitt trigger | NO | NO | NO | NO |
| Filter level | 38535V;38534K;883S | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | 38535V;38534K;883S |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | GOLD | GOLD | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | FLAT | FLAT |
| Terminal pitch | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| total dose | 1M Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 1M Rad(Si) V |