HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDFP14
| Parameter Name | Attribute value |
| Parts packaging code | DFP |
| package instruction | DFP, FL14,.3 |
| Contacts | 14 |
| Reach Compliance Code | unknown |
| Other features | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY |
| series | HCT |
| JESD-30 code | R-CDFP-F14 |
| JESD-609 code | e4 |
| length | 9.525 mm |
| Load capacitance (CL) | 50 pF |
| Logic integrated circuit type | NAND GATE |
| MaximumI(ol) | 0.004 A |
| Number of functions | 3 |
| Number of entries | 3 |
| Number of terminals | 14 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DFP |
| Encapsulate equivalent code | FL14,.3 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| power supply | 5 V |
| Prop。Delay @ Nom-Sup | 24 ns |
| propagation delay (tpd) | 24 ns |
| Certification status | Not Qualified |
| Schmitt trigger | NO |
| Filter level | MIL-PRF-38535 Class V |
| Maximum seat height | 2.92 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | GOLD |
| Terminal form | FLAT |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| total dose | 100k Rad(Si) V |
| width | 6.285 mm |
| Base Number Matches | 1 |
| 5962R9576501VXC | 5962R9576501VCC | HCTS10KMSH | HCTS10DMSH | |
|---|---|---|---|---|
| Description | HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDFP14 | HCT SERIES, TRIPLE 3-INPUT NAND GATE, CDIP14, CERAMIC, DIP-14 | IC,LOGIC GATE,3 3-INPUT NAND,CMOS, RAD HARD,FP,14PIN,CERAMIC | IC,LOGIC GATE,3 3-INPUT NAND,CMOS, RAD HARD,DIP,14PIN,CERAMIC |
| package instruction | DFP, FL14,.3 | DIP, DIP14,.3 | DFP, FL14,.3 | DIP, DIP14,.3 |
| Reach Compliance Code | unknown | unknown | not_compliant | not_compliant |
| JESD-30 code | R-CDFP-F14 | R-CDIP-T14 | R-XDFP-F14 | R-XDIP-T14 |
| JESD-609 code | e4 | e4 | e0 | e0 |
| Load capacitance (CL) | 50 pF | 50 pF | 50 pF | 50 pF |
| Logic integrated circuit type | NAND GATE | NAND GATE | NAND GATE | NAND GATE |
| MaximumI(ol) | 0.004 A | 0.004 A | 0.004 A | 0.004 A |
| Number of terminals | 14 | 14 | 14 | 14 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC |
| encapsulated code | DFP | DIP | DFP | DIP |
| Encapsulate equivalent code | FL14,.3 | DIP14,.3 | FL14,.3 | DIP14,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLATPACK | IN-LINE | FLATPACK | IN-LINE |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Prop。Delay @ Nom-Sup | 24 ns | 24 ns | 26 ns | 26 ns |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Schmitt trigger | NO | NO | NO | NO |
| Filter level | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | 38535V;38534K;883S | 38535V;38534K;883S |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | NO | YES | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | GOLD | GOLD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT | THROUGH-HOLE | FLAT | THROUGH-HOLE |
| Terminal pitch | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| total dose | 100k Rad(Si) V | 100k Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |