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1N4786B

Description
Variable Capacitance Diode, 6.8pF C(T), Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size49KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

1N4786B Overview

Variable Capacitance Diode, 6.8pF C(T), Silicon, Abrupt

1N4786B Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.0747
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor15
Maximum repetitive peak reverse voltage25 V
Maximum reverse current5e-9 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT

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