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2SB1450

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,7A I(C),TO-252VAR
CategoryDiscrete semiconductor    The transistor   
File Size105KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2SB1450 Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,7A I(C),TO-252VAR

2SB1450 Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)7 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
surface mountYES
Nominal transition frequency (fT)10 MHz
Ordering number:EN3150
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1450/2SD2199
50V/7A Switching Applications
Features
· Surface mount type device making the following
possible.
-Reduction in the number of manufacturing pro-
cesses for 2SB1450/2SD2199-applied equipment.
-High density surface mount applications.
-Small size of 2SB1450/2SD2199-applied equip-
ment.
· Low collector-to-emitter saturation voltage.
· Highly resistant to breakdown because of wide ASO.
Package Dimensions
unit:mm
2069B
[2SB1450/2SD2199]
( ) : 2SB1450
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Conditions
Ratings
(–)60
(–)50
(–)6
(–)7
(–)12
1.65
40
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Tj
Tstg
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
IC=(–)4A, IB=(–)0.4A
70*
30
10
(–)0.4
MHz
V
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB1450/2SD2199 are classified by 1A h
FE
as follows :
70
Q
140
100
R
200
140
S
280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/7039MO, TS No.3150–1/4
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