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1N6160

Description
1500W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-432, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size424KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

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1N6160 Overview

1500W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-432, 2 PIN

1N6160 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionE-LALF-W2
Reach Compliance Code_compli
ECCN codeEAR99
Maximum breakdown voltage61.6 V
Minimum breakdown voltage50.4 V
Breakdown voltage nominal value56 V
Shell connectionISOLATED
Maximum clamping voltage80.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeE-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Maximum repetitive peak reverse voltage42.6 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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