B772
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Type
Plastic Encapsulate Transistors
TO-126
Features
* Low speed switching
10.8
±0.2
O
3.1±
0.1
7.6
±0.2
1.3
±0.2
4.0
±0.1
2.7
±0.2
MAXIMUM RATINGS* T
A
=25
C
unless otherwise noted
o
1
2
3
2.2
±0.1
1.27
±0.1
15.5
±0.2
0.76
±0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-40
-30
-6
-3
1.25
150
-55-150
Units
V
V
V
A
W
o
2.29 Typ.
4.58
±0.1
0.5
±0.1
C
C
o
1: Emitter
2: Collector
3: Base
Dimens ions in Millimeters
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
-1
-10
-1
60
400
-0.5
-1.5
80
V
V
MHz
μA
μA
μA
-40
-30
-6
conditions
I
B
=0
MIN
Ic=-100μA
，I
E
=0
I
C
= -10 mA ,
I
E
= -100
μA，I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
=-30 V , I
B
=0
V
EB
=-6V ,
I
C
=0
V
CE
= -2V, I
C
= -1A
I
C
=-2A,
I
C
=-2A,
I
B
= -0.2A
I
B
= -0.2A
I
C
=-0.1A
f
T
V
CE
= -5V,
f =
10MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
http://www.SeCoSGmbH.com/
01-Jun-2004 Rev.
B
Any changing of specification will not be informed individual
Page 1 of
2
B772
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
Typical Characteristics
1000
-2.0
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
-1.6
-1.2
I
B
= -8mA
I
B
= -7mA
I
B
= -6mA
I
B
= -5mA
h
FE
, DC CURRENT GAIN
I
B
= -10mA
I
B
= -9mA
100
-0.8
I
B
= -4mA
I
B
= -3mA
I
B
= -2mA
I
B
= -1mA
0
-4
-8
-12
-16
-20
10
-0.4
1
-1
-10
-100
-1000
-10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat),V
BE
(sat)[mV] SATURATION VOLTAGE
-10000
I
C
= 10· I
B
1000
I
E
= 0
f=1MHz
-1000
V
BE
(sat)
-100
C
ob
[pF], CAPACITANCE
-100
-1000
-10000
100
10
-10
V
CE
(sat)
-1
-1
-10
1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
V
CE
=5V
-10
I
C
MAX(Pulse)
10
ms
Dis
Lim sipat
ite ion
d
1m
s
s
0u
10
100
I
C
[A], COLLECTOR CURRENT
I
C
MAX(DC)
-1
s/b
Lim
ite
d
-0.1
10
V
CEO
MAX
1
-0.01
-0.1
-1
-0.01
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
http://www.SeCoSGmbH.com/
01-Jun-2004 Rev.
B
Any changing of specification will not be informed individual
Page
2of 2
京公网安备 11010802033920号
EEWORLD
