MT9D436M-6X datasheet, PDF - EEWORLD Datasheet

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MT9D436M-6X: DescriptionEDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72; Categorystorage storage; File Size275KB，17 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT9D436M-6X Overview

EDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72

MT9D436M-6X Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micron Technology
Parts packaging code	SIMM
package instruction	SIMM-72
Contacts	72
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XSMA-N72
memory density	150994944 bi
Memory IC Type	EDO DRAM MODULE
memory width	36
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	72
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
refresh cycle	2048
Maximum standby current	0.024 A
Maximum slew rate	1.08 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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OBSOLETE

4, 8 MEG x 36

ECC-OPTIMIZED DRAM SIMMs

DRAM

MODULE

FEATURES

• Four-CAS#, ECC-optimized configuration in a 72-pin,

single in-line memory module (SIMM)

• 16MB (4 Meg x 36) and 32MB (8 Meg x 36)

• High-performance CMOS silicon-gate process

• Single 5V

±10%

power supply

• All inputs, outputs and clocks are TTL-compatible

• Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS#

(CBR) and HIDDEN

• 2,048-cycle refresh distributed across 32ms

• Extended Data-Out (EDO) PAGE MODE access

MT9D436 X

MT18D836 X

For the latest data sheet revisions, please refer to the Micron

Web site: www.micron.com/mti/msp/html/datasheet.html

PIN ASSIGNMENT (Front View)

72-Pin SIMM

4 Meg x 36 (shown)

8 Meg x 36

OPTIONS

• Timing

50ns access

60ns access

• Package

72 -pin SIMM

MARKING

-5

-6

KEY TIMING PARAMETERS

SPEED

-5

-6

RAC

CAC

CAS

84ns

104ns

50ns

60ns

20ns

25ns

30ns

13ns

15ns

8ns

10ns

PART NUMBERS

PART NUMBER

MT9D436M-x X

MT18D836M-x X

x = speed

CONFIGURATION

4 Meg x 36

8 Meg x 36

FEATURES

4 CAS#, ECC

MODE

EDO

PIN SYMBOL

A10

DQ18

DQ13

DQ1

DQ5

DQ36

DQ31

DQ19

DQ23

DQ14

DQ2

DQ6

CAS0#

DQ32

DQ20

DQ24

CAS2#

DQ3

DQ7

CAS3#

DQ33

DQ21

DQ25

CAS1#

DQ15

DQ4

DQ8

RAS0#

DQ34

DQ22

DQ26

45 NC/RAS1#* 63

DQ16

DQ35

NC (A11)

WE#

DQ17

DQ10

PRD1

DQ28

PRD2

33 NC/RAS3#* 51

DQ11

PRD3

RAS2#

DQ29

PRD4

DQ27

DQ12

DQ9

DQ30

*32MB version only

NOTE:

Symbols in parentheses are not used on these modules but may be used

for other modules in this product family. They are for reference only.

GENERAL DESCRIPTION

The MT9D436 X and MT18D836 X are randomly ac-

cessed, 16MB and 32MB solid-state memories organized in

a x36 configuration. These modules are designed for sys-

tems that utilize ECC and do not conduct single-byte ac-

cesses. These modules do not support parity functionality.

During READ or WRITE cycles, each bit is uniquely

addressed through 20 address bits that are entered 10 bits

(A0 -A9) at a time. RAS# is used to latch the first 10 bits and

CAS# the latter 10 bits. READ or WRITE cycles are selected

with the WE# input. A logic HIGH on WE# dictates read

mode, while a logic LOW on WE# dictates write mode.

During a WRITE cycle, data-in (D) is latched by the falling

edge of WE# or CAS#, whichever occurs last. EARLY WRITE

4, 8 Meg x 36 ECC-Optimized DRAM SIMMs

DM65.p65 – Rev. 9/98

occurs when WE# goes LOW prior to CAS# going LOW,

and the output pin(s) remain open (High-Z) until the next

CAS# cycle.

EDO PAGE MODE

EDO PAGE MODE is an accelerated FAST-PAGE-MODE

cycle. The primary advantage of EDO is the availability of

data-out even after CAS# goes back HIGH. EDO provides

for CAS# precharge time (

CP) to occur without the output

data going invalid. This elimination of CAS# output control

provides for pipelined READs.

FAST-PAGE-MODE modules have traditionally turned

the output buffers off (High-Z) with the rising edge of

CAS#. EDO operates like FAST-PAGE-MODE READs, ex-

cept data will be held valid or become valid after CAS# goes

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Micron Technology, Inc.

Micron is a registered trademark of Micron Technology, Inc.

MT9D436M-6X Related Products

	MT9D436M-6X	MT9D436M-5X
Description	EDO DRAM Module, 4MX36, 60ns, CMOS, SIMM-72	EDO DRAM Module, 4MX36, 50ns, CMOS, SIMM-72
Is it Rohs certified?	incompatible	incompatible
Maker	Micron Technology	Micron Technology
Parts packaging code	SIMM	SIMM
package instruction	SIMM-72	SIMM-72
Contacts	72	72
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON
JESD-30 code	R-XSMA-N72	R-XSMA-N72
memory density	150994944 bi	150994944 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE
memory width	36	36
Humidity sensitivity level	1	1
Number of functions	1	1
Number of ports	1	1
Number of terminals	72	72
word count	4194304 words	4194304 words
character code	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	4MX36	4MX36
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	SIMM	SIMM
Encapsulate equivalent code	SSIM72	SSIM72
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225
power supply	5 V	5 V
Certification status	Not Qualified	Not Qualified
refresh cycle	2048	2048
Maximum standby current	0.024 A	0.024 A
Maximum slew rate	1.08 mA	0.99 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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