MT5C6404C-35L/883C datasheet, PDF

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MT5C6404C-35L/883C: DescriptionStandard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22; Categorystorage storage; File Size123KB，10 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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MT5C6404C-35L/883C Overview

Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22

MT5C6404C-35L/883C Parametric

Parameter Name	Attribute value
Maker	Micross
Parts packaging code	DIP
package instruction	0.300 INCH, CERAMIC, DIP-22
Contacts	22
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	35 ns
JESD-30 code	R-CDIP-T22
length	29.337 mm
memory density	65536 bi
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of terminals	22
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm

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SRAM

Austin Semiconductor, Inc.

16K x 4 SRAM

SRAM MEMORY ARRAY

MT5C6404

PIN ASSIGNMENT

(Top View)

22-Pin DIP (C)

(300 MIL)

A10

A11

A12

A13

CE\

Vss

Vcc

DQ4

DQ3

DQ2

DQ1

WE\

AVAILABLE AS MILITARY

SPECIFICATIONS

•

SMD 5962-86859

SMD 5962-89692

MIL-STD-883

FEATURES

• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

• Battery Backup: 2V data retention

• High-performance, low-power CMOS double-metal

process

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE\

• All inputs and outputs are TTL compatible

GENERAL DESCRIPTION

The Austin Semiconductor SRAM family employs

high-speed, low-power CMOS designs using a four-transistor

memory cell. Austin Semiconductor SRAMs are fabricated

using double-layer metal, double-layer polysilicon

technology.

For flexibility in high-speed memory applications, Austin

Semiconductor offers chip enable (CE\) on all organizations.

This enhancement can place the outputs in High-Z for

additional flexibility in system design.

Writing to these devices is accomplished when write

enable (WE\) and CE\ inputs are both LOW. Reading is

accomplished when WE\ remains HIGH and CE\ goes LOW.

The device offers a reduced power standby mode when

disabled. This allows system designs to achieve low standby

power requirements.

All devices operate from a single +5V power supply and

all inputs and outputs are fully TTL compatible.

OPTIONS

• Timing

12ns access

15ns access

20ns access

25ns access

35ns access

45ns access

55ns access

70ns access

• Package(s)

Ceramic DIP (300 mil)

MARKING

-12

-15

-20

-25

-35

-45*

-55*

-70*

No. 105

• Operating Temperature Ranges

Industrial (-40

C to +85

Military (-55 C to +125 C)

• 2V data retention/low power

*Electrical characteristics identical to those provided for the 35ns

access devices.

For more products and information

please visit our web site at

www.austinsemiconductor.com

MT5C6404

Rev. 1.0 9/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

MT5C6404C-35L/883C Related Products

	MT5C6404C-35L/883C	MT5C6404C-25L/883C	MT5C6404C-20L/883C	MT5C6404C-45L/883C	MT5C6404C-70L/883C	MT5C6404C-12L/883C	MT5C6404C-55L/883C
Description	Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 20ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 12ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22
Contacts	22	22	22	22	22	22	22
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	35 ns	25 ns	20 ns	45 ns	70 ns	12 ns	55 ns
JESD-30 code	R-CDIP-T22	R-CDIP-T22	R-CDIP-T22	R-CDIP-T22	R-CDIP-T22	R-CDIP-T22	R-CDIP-T22
length	29.337 mm	29.337 mm	29.337 mm	29.337 mm	29.337 mm	29.337 mm	29.337 mm
memory density	65536 bi	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1
Number of terminals	22	22	22	22	22	22	22
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883
Maximum seat height	5.08 mm	5.08 mm	5.08 mm	5.08 mm	5.08 mm	5.08 mm	5.08 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm
Maker	Micross	Micross	Micross	-	Micross	Micross	Micross

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