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MT5C6404C-25L/883C

Description
Standard SRAM, 16KX4, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Categorystorage    storage   
File Size123KB,10 Pages
ManufacturerMicross
Websitehttps://www.micross.com
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MT5C6404C-25L/883C Overview

Standard SRAM, 16KX4, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22

MT5C6404C-25L/883C Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeDIP
package instruction0.300 INCH, CERAMIC, DIP-22
Contacts22
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time25 ns
JESD-30 codeR-CDIP-T22
length29.337 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals22
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX4
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.08 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm
Base Number Matches1
SRAM
Austin Semiconductor, Inc.
16K x 4 SRAM
SRAM MEMORY ARRAY
MT5C6404
PIN ASSIGNMENT
(Top View)
22-Pin DIP (C)
(300 MIL)
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE\
Vss
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
Vcc
A4
A3
A2
A1
A0
DQ4
DQ3
DQ2
DQ1
WE\
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-86859
SMD 5962-89692
MIL-STD-883
FEATURES
• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) on all organizations.
This enhancement can place the outputs in High-Z for
additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil)
MARKING
-12
-15
-20
-25
-35
-45*
-55*
-70*
C
No. 105
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 35ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C6404
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

MT5C6404C-25L/883C Related Products

MT5C6404C-25L/883C MT5C6404C-20L/883C MT5C6404C-45L/883C MT5C6404C-70L/883C MT5C6404C-12L/883C MT5C6404C-35L/883C MT5C6404C-55L/883C
Description Standard SRAM, 16KX4, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Standard SRAM, 16KX4, 20ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Standard SRAM, 16KX4, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Standard SRAM, 16KX4, 12ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Parts packaging code DIP DIP DIP DIP DIP DIP DIP
package instruction 0.300 INCH, CERAMIC, DIP-22 0.300 INCH, CERAMIC, DIP-22 0.300 INCH, CERAMIC, DIP-22 0.300 INCH, CERAMIC, DIP-22 0.300 INCH, CERAMIC, DIP-22 0.300 INCH, CERAMIC, DIP-22 0.300 INCH, CERAMIC, DIP-22
Contacts 22 22 22 22 22 22 22
Reach Compliance Code compliant compliant compliant compliant compliant compli compli
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 25 ns 20 ns 45 ns 70 ns 12 ns 35 ns 55 ns
JESD-30 code R-CDIP-T22 R-CDIP-T22 R-CDIP-T22 R-CDIP-T22 R-CDIP-T22 R-CDIP-T22 R-CDIP-T22
length 29.337 mm 29.337 mm 29.337 mm 29.337 mm 29.337 mm 29.337 mm 29.337 mm
memory density 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bi 65536 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 4 4 4 4 4 4 4
Number of functions 1 1 1 1 1 1 1
Number of terminals 22 22 22 22 22 22 22
word count 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words
character code 16000 16000 16000 16000 16000 16000 16000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DIP DIP DIP DIP DIP DIP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
Maximum seat height 5.08 mm 5.08 mm 5.08 mm 5.08 mm 5.08 mm 5.08 mm 5.08 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
width 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
Maker Micross Micross - Micross Micross Micross Micross
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