MPSL51 datasheet, PDF - EEWORLD Datasheet

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MPSL51: Description300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN; CategoryDiscrete semiconductor The transistor; File Size519KB，4 Pages; ManufacturerCentral Semiconductor

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MPSL51 Overview

300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN

MPSL51 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	_compli
Is Samacsys	N
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Base Number Matches	1

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MPSA92

MPSA93

w w w. c e n t r a l s e m i . c o m

SILICON

HIGH VOLTAGE

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPSA92 and

MPSA93 are silicon PNP transistors designed for

high voltage applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

CHARACTERISTICS:

(TA=25°C)

TEST CONDITIONS

VCB=200V

VCE=160V

VEB=3.0V

IC=100μA

IC=1.0mA

IE=100μA

IC=20mA, IB=2.0mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=10V,

VCE=20V,

IC=30mA

IC=10mA, f=100MHz

VCB=20V, IE=0, f=1.0MHz

VEBO

TJ, Tstg



MPSA92

MIN

MAX

250

300

5.0

100

0.5

0.9

6.0

MPSA92

300

5.0

500

625

1.5

MPSA93

200

UNITS

°C

°C/W

-65 to +150

200

83.3

MPSA93

MIN

MAX

200

5.0

250

100

0.4

0.9

8.0

UNITS

MHz

R2 (15-December 2014)

MPSL51 Related Products

	MPSL51	MPSA25	MPSA45	MPSA75	MPSA76	MPSD04	MPSD54	MPSH11	MPSL01	PN3639
Description	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	RF SMALL SIGNAL TRANSISTOR	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	-
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-	TO-92	-
package instruction	CYLINDRICAL, O-PBCY-T3	TO-92, 3 PIN	CYLINDRICAL, O-PBCY-T3	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN	-	CYLINDRICAL, O-PBCY-T3	-
Contacts	3	3	3	3	3	3	3	-	3	-
Reach Compliance Code	_compli	unknow	not_compliant	_compli	not_compliant	_compli	unknow	unknow	not_compliant	-
Maximum collector current (IC)	0.6 A	0.5 A	0.3 A	0.5 A	0.5 A	0.5 A	0.5 A	-	0.15 A	-
Configuration	SINGLE	DARLINGTON	SINGLE	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	40	10000	50	10000	10000	1000	1000	60	50	-
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	-
Number of components	1	1	1	1	1	1	1	1	1	-
Number of terminals	3	3	3	3	3	3	3	3	3	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	PNP	NPN	NPN	PNP	PNP	NPN	PNP	NPN	NPN	-
Maximum power dissipation(Abs)	0.625 W	-	0.625 W	-	0.625 W	1.5 W	0.625 W	0.35 W	0.625 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	60 MHz	125 MHz	20 MHz	125 MHz	125 MHz	100 MHz	100 MHz	650 MHz	60 MHz	-

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