MPSD04 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> MPSD04

MPSD04: DescriptionNPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size519KB，4 Pages; ManufacturerCentral Semiconductor

Download Datasheet Parametric Compare View All

MPSD04 Overview

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPSD04 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-92
package instruction	TO-92, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

Preview

Download Datasheet

View All

MPSA92

MPSA93

w w w. c e n t r a l s e m i . c o m

SILICON

HIGH VOLTAGE

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPSA92 and

MPSA93 are silicon PNP transistors designed for

high voltage applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

CHARACTERISTICS:

(TA=25°C)

TEST CONDITIONS

VCB=200V

VCE=160V

VEB=3.0V

IC=100μA

IC=1.0mA

IE=100μA

IC=20mA, IB=2.0mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=10V,

VCE=20V,

IC=30mA

IC=10mA, f=100MHz

VCB=20V, IE=0, f=1.0MHz

VEBO

TJ, Tstg



MPSA92

MIN

MAX

250

300

5.0

100

0.5

0.9

6.0

MPSA92

300

5.0

500

625

1.5

MPSA93

200

UNITS

°C

°C/W

-65 to +150

200

83.3

MPSA93

MIN

MAX

200

5.0

250

100

0.4

0.9

8.0

UNITS

MHz

R2 (15-December 2014)

MPSD04 Related Products

	MPSD04	MPSA25	MPSA45	MPSA75	MPSA76	MPSD54	MPSH11	MPSL01	MPSL51	PN3639
Description	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	RF SMALL SIGNAL TRANSISTOR	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN	300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	-
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-	TO-92	TO-92	-
package instruction	TO-92, 3 PIN	TO-92, 3 PIN	CYLINDRICAL, O-PBCY-T3	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN	-	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	-
Contacts	3	3	3	3	3	3	-	3	3	-
Reach Compliance Code	_compli	unknow	not_compliant	_compli	not_compliant	unknow	unknow	not_compliant	_compli	-
Maximum collector current (IC)	0.5 A	0.5 A	0.3 A	0.5 A	0.5 A	0.5 A	-	0.15 A	0.6 A	-
Configuration	DARLINGTON	DARLINGTON	SINGLE	DARLINGTON	DARLINGTON	DARLINGTON	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	1000	10000	50	10000	10000	1000	60	50	40	-
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	-
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	-
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	-
Number of components	1	1	1	1	1	1	1	1	1	-
Number of terminals	3	3	3	3	3	3	3	3	3	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	NPN	NPN	NPN	PNP	PNP	PNP	NPN	NPN	PNP	-
Maximum power dissipation(Abs)	1.5 W	-	0.625 W	-	0.625 W	0.625 W	0.35 W	0.625 W	0.625 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	100 MHz	125 MHz	20 MHz	125 MHz	125 MHz	100 MHz	650 MHz	60 MHz	60 MHz	-

Recommended Resources

Pulse width modulated mono circuit

Leakage protection ASIC 54123 circuit

Latch type short circuit protection circuit

Stabilized power supply with 80% efficiency

Boost circuit with low battery voltage detection

Single-junction transistor three-stage frequency dividing circuit

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components