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GL34B

Description
0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA
CategoryDiscrete semiconductor    Ordinary rectifier diode   
File Size209KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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GL34B Overview

0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA

GL34B Parametric

Parameter NameAttribute value
Case StyleDO-213AA
IF(A)0.5
Maximum recurrent peak reverse voltage100
Peak forward surge current10
Maximum instantaneous forward voltage1.2
@IVA(A)0.5
Maximum reverse current5.0
TRR(nS)/
classDiodes
GL34A-GL34M
Surface Mount Rectifiers
Features
11
Plastic package has
underwriters laboratory
1
flammability classifications
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
11
1
250
o
C/10 seconds at terminals
1.6± 0.1
REVERSE VOLTAGE: 50 - 1000 V
CURRENT: 0.5A
DO - 213AA
SOLDERABLE ENDS
D2=D1
0
0.20
D2
D1
0.5± 0.1
0.5± 0.1
3.5± 0.2
Mechanical Data
11
Case:JEDEC DO-213AA,molded plastic over
11passivated
chip
Polarity: Color band denotes cathode end
Weight: 0.0014 ounces, 0.036 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
GL34A GL34B GL34D GL34G GL34J GL34K GL34M
UNITS
Polarity color bands (2nd Band)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current
V
@T
L
=75
Peak
forw
ard
surge current
V
8.3ms
single
half-sine-w ave superimposed
V
on rated load (JEDEC Method)
Maximum instantaneous forw ard voltage at
0.5
A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125 C
o
Gray
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
Red
100
70
100
Orange Yellow Green
200
140
200
400
280
400
0.5
10.0
1.2
5.0
600
420
600
Blue
800
560
800
Violet
1000
700
1000
V
V
V
A
A
50
35
50
1.3
V
A
50.0
4.0
1.5
Typical junction capacitance(NOTE 2)
pF
S
o
Typical reverse recovery time(NOTE3)
Typical thermal resitance (NOTE
4)
Operating junction temperature range
Storage temperature range
R
JA
T
J
T
STG
150
-55--------+150
-55--------+150
C/W
o
C
NOTE: 1.Measured
at 1.0MHz and applied reverse voltage of 4.0volts
2.Thermal
resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas
3.Measured with I
F
=0.5A,I
R
=1.0A,Irr=0.25A.
4.
Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
http://www.luguang.cn
mail:lge@luguang.cn

GL34B Related Products

GL34B GL34A GL34D GL34G GL34J GL34K GL34M
Description 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 600 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA
Case Style DO-213AA - DO-213AA DO-213AA DO-213AA DO-213AA DO-213AA
IF(A) 0.5 - 0.5 0.5 0.5 0.5 0.5
Maximum recurrent peak reverse voltage 100 - 200 400 600 800 1000
Peak forward surge current 10 - 10 10 10 10 10
Maximum instantaneous forward voltage 1.2 - 1.2 1.2 1.3 1.3 1.3
@IVA(A) 0.5 - 0.5 0.5 0.5 0.5 0.5
Maximum reverse current 5.0 - 5.0 5.0 5.0 5.0 5.0
TRR(nS) / - / / / / /
class Diodes - Diodes Diodes Diodes Diodes Diodes

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