HFA15PB60
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 15 A
FEATURES
•
•
•
•
•
•
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Designed and qualified for industrial level
Base
common
cathode
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
2
1
Anode
1
3
Anode
2
DESCRIPTION
HFA15PB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 15 A continuous current, the
HFA15PB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15PB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
TO-247AC modified
PRODUCT SUMMARY
V
R
V
F
at 15 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dI
(rec)M
/dt (typical) at 125 °C
I
RRM
(typical)
600 V
1.7 V
15 A
19 ns
150 °C
80 nC
160 A/µs
4.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
15
150
60
74
29
- 55 to + 150
W
°C
A
UNITS
V
Document Number: 93062
Revision: 04-Dec-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
HFA15PB60
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 µA
I
F
= 15 A
Maximum forward voltage
V
FM
I
F
= 30 A
I
F
= 15 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
12
MAX.
-
1.7
2.0
1.6
10
1000
50
-
µA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
19
42
74
4.0
6.5
80
220
188
160
MAX.
-
60
120
6.0
10
180
600
-
A/µs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and gerased
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.25
6.0
0.21
-
MAX.
300
1.7
40
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
K/W
UNITS
°C
HFA15PB60
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93062
Revision: 04-Dec-08
HFA15PB60
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
I
F
- Instantaneous Forward Current (A)
100
10 000
I
R
- Reverse Current (µA)
1000
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Response
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93062
Revision: 04-Dec-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
HFA15PB60
Vishay High Power Products
100
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
HEXFRED
®
Ultrafast Soft Recovery Diode, 15 A
800
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
600
80
t
rr
(ns)
60
Q
rr
(nC)
400
40
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
200
20
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
1000
0
100
1000
0
100
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
25
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
10 000
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
20
15
10
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
dI
(rec)M
/dt (A/µs)
I
rr
(A)
1000
5
0
100
1000
100
100
V
R
= 200
V
T
J
= 125 °C
T
J
= 25 °C
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93062
Revision: 04-Dec-08
HFA15PB60
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 15 A
V
R
= 200
V
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93062
Revision: 04-Dec-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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