2N6297 datasheet, PDF - EEWORLD Datasheet

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2N6297: DescriptionPower Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size91KB，1 Pages; ManufacturerCrimson Semiconductor Inc.

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2N6297 Overview

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

2N6297 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Crimson Semiconductor Inc.
package instruction	TO-66, 2 PIN
Reach Compliance Code	unknow
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	Single
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	50 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz

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POWER SILICON PNP

Item

Number

Part Number

Manufacturer

Ie

Max

V(BR)CEO

hFE

Min

Max

fT

leBO

Max

tr

Max

tf

Max

Po

Max

TOper

Max

(A)

(V)

(Hz)

(A)

(8)

(W)

ee)

140

175 J

140 J

140

J

Package

Style

I(C)

>=

1 A, (Co nt' d)

NthAmerSemi

5

-

10

MJE703T

2N6297

2S81102

1081024

108676

2S81 004

2S8908

S1237

MJE254

80592

See

Index

Hitachi Ltd

Inti Device

ToshibaCorp

Indust Mexi

See

Index

Motorola

NEGElecslnc

NEC Corp JA

NEG Corp JA

See Index

Hitachi Ltd

GE Solid St

NEC Corp JA

Sanyo Elect

Sa~o

Elect

NE Corp JA

=?ee

In~ex

See Index

GE Solid St

See Index

Semelab

Natl Semi

Semelab

~~~jg~~

2S81095M

MJE253

2S8860

RCA1C04

2S81095L

2S81168

2S81216

2S81095K

RCA1C13

SK3626

2N6468

2N6476

SM2177

NA62U

NA62W

80S18

BDS19

15

20

~~~~~

25

30

4.0

4

4.0

4.U

4.0

4.5

8.0

80

90

100

750

1k

2.0k

40

25

30

40

50

60

70

100

1~

18k

20k

4.0M

100u

500u

100u

20u

100n

100u

-10u

10u

100n

1.0m

10u

1.0u

10u

1.0m

100u

1.0m

20u

0.8u

400n

150n

.40u

700n

1.0u

.40

200

80

180

250

120

400

200

10M

40M

3.0M

~g~

20M

40M

10M

20M

180M

20M

5.0M

10M

7.0M

5.0M

100M

30M

100n

50n

50

40

20

30

20

1.0

40

1.5

40

2.0

1.5

40

2.0

20

2.0

40

23

16

30

1.8

2.0

50

~:g

j

J

1f~

J

140 J

140

J

~ ~g

120

130

200

45

120

150

15

40

60

15

20

30

40

~~g

250

150

100

250

~~

175 J

140 J

140

J

TO-220

TO-66

TO-220

TO-220var

TO-220A8

TO-220var

TO-251

TO-220

TO-126var

TO-127var

TO-220var

TO-126var

TO-220

TO-220A8

TO-220var

TO-126

TO-251var

TO-220var

IU-oo

TO-220A8

TO-220AB

TO-66var

TO-66

TO-220A8

TO-220

TO-126

TO-220

1U-220

I(C)

>=

5 A

Semelab

Matsushita

Sanyo Elect

ToshibaCorp

ToshibaCoro

!OShiba~rp

-

35

40

SM3893

2S81050

2S8967

2S81127

2S81131

2S81140

2S81205

2S81302

2SA1120

2SA12420

2SA1357Y

80944

B0944

B0944F

MJD210

MJD21 0-1

MJE210

MJE2150

SML3709

SOT3706

SOT3709

B0946

SML3703

SML3726

SML3775

SML3778

SML3321

SML3325

SML3701

SML3750

2N3179

2N3183

2N3187

2N3191

2N3195

SOT3721

5.0

10

20

100

90

100

500

625

400

320

200

250M

120M

320m

170M

100n

SOOn

500n

100n

40n

10n

~~~~~~~~

45

50

ToshibaCorp

NthAmerSemi

PhilipsElec

Motorola

See Index

CrimsonSemi

~ntral:seml

~:g

5.0

~g

20

22

24

25

~gg

160

85

45

50

20

50

85

~~g

320

475

180

Hg~

170M

3.0M

65M

3.0M

80M

60M

3.0M

3.UM

3.0M

10M

40M

60M

1.0M

10M

~gg~

100u

100n

1.0

20

10

1.0

10

1.3

1.0

1.5

1.0

1.5

40

12

1.5

15

16

28

40

140 J

140

J

140 J

TO-92

SIP

OPAK

TO-126

TO-92

TO-126

TO-251var

TO-247

TO-126var

TO-251

~:g

j

140 J

140

J

140 J

14u

J

fg:~~~var

TO-126var

TO-220AB

SOT-186

OPAK

TO-221

TO-126var

TO-126

~~I~~g~

55

60

-

65

Semelab

Solitron

PPC Product

Sid St Dvcs

PPC Product

Sid St Dvcs

Solitron

PhilipsElec

~trlAmer:seml

~:g

5.0

~g

30

32

40

~~

+g:J~fj

TO-66

TO-220AB

60

180

475

~gg:gF

70

PhilipsElec

Semelab

~In~ex

~:g

5.0

~.U

g~

:~~

200u

100u

lUUU

:g

16

4.0

5.0

16

30

140 J

14u

J

~gf.~~~~

TO-66

TO-39

TO-66

TO-3

IU-oU

StR-1/4

TO-53

TO-3

StR-1I4

TO-53

TO-3

TO-66

fg:gg

TO-66

TO-3

TO-66

~~~~~~

75

-

80

85

See Index

Space Power

New England

Sid St Dvcs

See

Index

See Index

Solitron

5.0

:g

40

4U

40

~gH~~~

~~C:S~r~~~t

Sid St Dvcs

Solitron

PPC Product

Solitron

PPC Product

Sid St Dvcs

Solitron

PPC Product

~Idst

DYCS

Solitron

PPC Product

~:g

5.0

-

90

SOT3729

SOT3757

SOT3762

SOT3716

~gH~~~

:g

40

1u

10

lU

10

12

30

~g

30

~g~

10M

lUM

10M

~g

36

200u

10m

1.0m

1.l?m

1.0m

1.I?m

1.0m

~u

1f~:S

85

75

85

75

28

175C

175 C

175C

175 C

175C

175 C

175C

~g

28

52

28

1005

2N6297 Related Products

	2N6297	MJE253
Description	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126VAR, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	Crimson Semiconductor Inc.	Crimson Semiconductor Inc.
package instruction	TO-66, 2 PIN	TO-126VAR, 3 PIN
Reach Compliance Code	unknow	unknown
Maximum collector current (IC)	4 A	4 A
Collector-emitter maximum voltage	80 V	100 V
Configuration	Single	Single
Minimum DC current gain (hFE)	750	40
JESD-30 code	O-MBFM-P2	R-PSFM-T3
JESD-609 code	e0	e0
Number of terminals	2	3
Maximum operating temperature	200 °C	150 °C
Package body material	METAL	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	50 W	1.5 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	THROUGH-HOLE
Terminal location	BOTTOM	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	40 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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