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KSC2316

Description
Bipolar transistor, 120V, 0.8A, 120MHZ, -55-150℃
CategoryDiscrete semiconductor    Bipolar transistor   
File Size705KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

KSC2316 Overview

Bipolar transistor, 120V, 0.8A, 120MHZ, -55-150℃

KSC2316 Parametric

Parameter NameAttribute value
polarityNPN
Collector-emitter breakdown voltage120
Collector Current - Continuous0.8
DC current gain - Mi80
DC current gain - Max240
Transition frequency120
PackageTO-92MOD
Storage Temperature Range-55-150
classTransistors
TO-92MOD Transistor (NPN)
KSC2316
TO-92MOD
1
2
3
1. EMITTER
2. COLLECTOR
3. BASE
8.400
8.800
0.900
1.100
0.400
0.600
13.800
14.200
5.800
6.200
Features
Driver stage amplifier
Complement to KSA916
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
1.500 TYP
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
120
120
5
800
900
150
-55-150
Units
V
V
V
mA
mW
0.000
0.380
2.900
3.100
1.600
0.400 4.700
0.500 5.100
4.000
1.730
2.030
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
f
T
C
ob
unless
Test
otherwise
specified)
MIN
120
120
5
0.1
60
80
240
1
120
30
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=120V, I
E
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF
Rank
Range
h
FE(2)
O
80-160
Y
120-240
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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