PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INA1001AC1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
0.65
DESCRIPTION
INA1001AC1 is a silicon PNP epitaxial type transistor.
It is designed with high collector current and small V
CE(sat)
.
2.8
1.5
0.65
UNIT：mm
0.95
0.95
・High collector current(I
C
=-500mA)
・Low collector saturation voltage
(V
CE（sat）
<-0.25V
max
；I
C
=-100mA、I
B
=-10mA)
・High voltage V
CEO
=-80V(Type)
2.8
1.90
・Super mini package for easy mounting
①
②
③
1.1
APPLICATION
Power supply, Relay drive
0.8
0½0.1
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
PARAMETER
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-80
-80
-4
-500
200
＋150
-55½＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
½
ＦＥ1
½
ＦＥ2
V
CE(sat)
f
T
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
TEST CONDITIONS
I
C
=-1mA，I
B
=0mA
I
C
=-100μA，I
E
=0mA
I
E
=-100μA，I
C
=0mA
V
CB
=-80V，I
E
=0mA
V
EB
=-4V，I
C
=0mA
V
CE
=-1V，I
C
=-10mA
V
CE
=-1V，I
C
=-100mA
I
C
=-100mA，I
B
=-10mA
V
CE
=-1V，I
E
=100mA，f=100MHz
MIN
-80
-80
-4
-
-
95
95
-
50
LIMITS
TYP
MAX
-
-
-
-
-
-
-
-0.1
-
-0.1
-
-
-
-
-
-0.3
-
-
UNIT
V
V
V
μA
μA
-
-
V
MHz
ISAHAYA ELECTRONICS CORPORATION
0.13
AFD
0.4
FEATURE
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
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h
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Mar.2013
stm32/stm8
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