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EGP50F

Description
5 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size36KB,2 Pages
ManufacturerETC
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EGP50F Overview

5 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD

EGP50A........ EGP50G
5 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier
Dimensions in mm.
DO-201AD
(Plastic)
Voltage
50 to 400 V.
Current
5 A at 55 ºC.
®
9.1
± 0.3
62.5
± 0.5
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
3 mm. to the body.
Glass Passivated Junction
High current capability
The plastic material carries
U/L recognition 94 V-0
Terminals: Axial Leads
Polarity: Color band denotes cathode
EGP50A
EGP50B
EGP50D
EGP50F
EGP50G
Maximum Ratings, according to IEC publication No. 134
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
t
rr
C
j
T
j
T
stg
E
RSM
Peak Recurrent reverse voltage (V)
Maximum RMS voltage
Maximum DC blocking voltage
Forward current at Tamb = 55 °C
Recurrent peak forward current (A)
8.3 ms. peak forward surge current
(Jedec Method)
50
35
50
100
70
100
200
140
200
5A
50 A
150 A
50 ns
100 pF
300
210
300
400
280
400
Max. reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
Typical Junction Capacitance at 1 MHz
and reverse voltaje of 4V
DC
Operating temperature range
Storage temperature range
Maximum non repetitive peak
reverse avalanche energy.
I
R
= 1A ; T
J
= 25 ºC
Max. forward voltage drop at I
F
= 5 A
at 25 ºC
Max. reverse current at V
RRM
at 150 ºC
Max. thermal resistance ( l = 10 mm.)
– 65 to + 150 °C
– 65 to + 150 °C
20 mJ
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
thj-a
1.0 V
5µA
50 µ A
20 °C/W
Feb - 00
1.25 V

EGP50F Related Products

EGP50F EGP50A EGP50B EGP50D EGP50G
Description 5 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 50 V, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE

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