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PEMD3

Description
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
CategoryDiscrete semiconductor    The transistor   
File Size987KB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PEMD3 Overview

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PEMD3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 11 — 25 September 2013
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic
packages.
Table 1.
Product overview
Package
NXP
PEMD3
PIMD3
PUMD3
SOT666
SOT457
SOT363
JEITA
-
SC-74
SC-88
PNP/PNP
complement
PEMB11
-
PUMB11
NPN/NPN
complement
PEMH11
-
PUMH11
Package
configuration
ultra small and flat lead
small
very small
Type number
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
7
0.8
Typ
-
-
10
1
Max
50
100
13
1.2
Unit
V
mA
k
Per transistor; for the PNP transistor (TR2) with negative polarity

PEMD3 Related Products

PEMD3 PEMD3-115 PUMD3
Description NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Is it lead-free? Lead free - Lead free
Is it Rohs certified? conform to - conform to
Maker NXP - NXP
package instruction PLASTIC PACKAGE-6 - PLASTIC, SC-88, 6 PIN
Contacts 6 - 6
Reach Compliance Code compli - compli
ECCN code EAR99 - EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 - BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V - 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 - 30
JESD-30 code R-PDSO-F6 - R-PDSO-G6
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 2 - 2
Number of terminals 6 - 6
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Polarity/channel type NPN AND PNP - NPN AND PNP
Maximum power dissipation(Abs) 0.3 W - 0.2 W
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface Tin (Sn) - Tin (Sn)
Terminal form FLAT - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature 30 - 30
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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