SIHFBC40S datasheet, PDF - EEWORLD Datasheet

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SIHFBC40S: Description6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size329KB，11 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SIHFBC40S Overview

6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

SIHFBC40S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknow
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	570 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	6.2 A
Maximum drain current (ID)	6.2 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	130 W
Maximum pulsed drain current (IDM)	25 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

8.3

Single

FEATURES

600

1.2

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount (IRFBC40S, SiHFBC40S)

• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

• Available in Tape and Reel (IRFBC40S, SiHFBC40S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC40L, SiHFBC40L) is available

for low-profile applications.

PAK (TO-263)

SiHFBC40STRL-GE3

IRFBC40STRLPbF

SiHFBC40STL-E3

PAK (TO-262)

SiHFBC40L-GE3

IRFBC40LPbF

SiHFBC40L-E3

DESCRIPTION

PAK

(TO-262)

PAK (TO-263)

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHFBC40S-GE3

IRFBC40SPbF

SiHFBC40S-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

= 25 °C

Current

a,e

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

600

± 20

6.2

3.9

1.0

570

6.2

130

3.1

3.0

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

dV/dt

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

, T

stg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V; starting T

= 25 °C, L = 27 mH, R

= 25

,

= 6.2 A (see fig. 12).

c. I



6.2 A, dI/dt



80 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRFBC40, SiHFBC40 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91116

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFBC40S Related Products

	SIHFBC40S	SIHFBC40L	SIHFBC40L-E3	SIHFBC40S-E3	SIHFBC40STL	SIHFBC40STL-E3	IRFBC40STRR
Description	6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	MOSFET N-CH 600V 6.2A D2PAK
Is it lead-free?	Contains lead	Contains lead	Lead free	Lead free	Contains lead	Lead free	Contains lead
Is it Rohs certified?	incompatible	incompatible	conform to	conform to	incompatible	conform to	incompatible
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	3	3	4	4	4	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	570 mJ	570 mJ	570 mJ	570 mJ	570 mJ	570 mJ	570 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V	600 V	600 V	600 V	600 V
Maximum drain current (Abs) (ID)	6.2 A	6.2 A	6.2 A	6.2 A	6.2 A	6.2 A	6.2 A
Maximum drain current (ID)	6.2 A	6.2 A	6.2 A	6.2 A	6.2 A	6.2 A	6.2 A
Maximum drain-source on-resistance	1.2 Ω	1.2 Ω	1.2 Ω	1.2 Ω	1.2 Ω	1.2 Ω	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1	1	1
Number of terminals	2	3	3	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240	260	260	240	260	225
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	130 W	130 W	130 W	130 W	130 W	130 W	130 W
Maximum pulsed drain current (IDM)	25 A	25 A	25 A	25 A	25 A	25 A	25 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	YES	YES	YES	YES
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	40	40	30	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1
Parts packaging code	D2PAK	TO-262AA	TO-262AA	D2PAK	D2PAK	D2PAK	-
Shell connection	DRAIN	-	-	DRAIN	DRAIN	DRAIN	DRAIN
JEDEC-95 code	TO-263AB	TO-262AA	TO-262AA	TO-263AB	TO-263AB	TO-263AB	-
JESD-609 code	e0	e0	e3	e3	e0	e3	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	-
Humidity sensitivity level	-	-	1	1	-	1	1

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