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SIHFZ34STR

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size1008KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SIHFZ34STR Overview

Power MOSFET

SIHFZ34STR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
46
11
22
Single
60
0.050
FEATURES
Advanced Process Technology
Surface Mount
Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)
175 °C Operating Temperature
Fast Switching
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
D
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2
W in a typical surface mount application.
The through-hole version (IRFZ34L/SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRFZ34SPbF
SiHFZ34S-E3
IRFZ34S
SiHFZ34S
D
2
PAK (TO-263)
IRFZ34STRRPbF
a
SiHFZ34STRPbF
a
IRFZ34STRR
a
SiHFZ34STR
a
D
2
PAK (TO-263)
IRFZ34STRLPbF
a
SiHFZ34STLPbF
a
IRFZ34STRL
a
SiHFZ34STL
a
I
2
PAK (TO-263)
IRFZ34LPbF
SiHFZ34L-E3
IRFZ34L
SiHFZ34L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Maximum Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
LIMIT
60
± 20
30
21
120
0.59
200
88
3.7
4.5
- 55 to + 175
300
d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
dV/dt
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, Starting T
J
= 25 °C, L = 260 µH, R
G
= 25
Ω,
I
AS
= 30 A (see fig. 12).
c. I
SD
30 A, dI/dt
200 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
www.vishay.com
1

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SIHFZ34STR IRFZ34STRL SIHFZ34STL SIHFZ34STLPBF
Description Power MOSFET Power MOSFET Power MOSFET Power MOSFET
Is it Rohs certified? incompatible incompatible incompatible conform to
Parts packaging code D2PAK D2PAK D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 3 4 4
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ 200 mJ 200 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 30 A 30 A 30 A 30 A
Maximum drain current (ID) 30 A 30 A 30 A 30 A
Maximum drain-source on-resistance 0.05 Ω 0.05 Ω 0.05 Ω 0.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 NOT SPECIFIED 240 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 88 W 88 W 88 W 88 W
Maximum pulsed drain current (IDM) 120 A 120 A 120 A 120 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED 30 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - Contains lead Lead free
Other features ULTRA-LOW RESISTANCE - ULTRA-LOW RESISTANCE ULTRA-LOW RESISTANCE
JESD-609 code e0 - e0 e3
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Matte Tin (Sn)
Base Number Matches 1 - 1 1
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