1N4148WS datasheet, PDF - EEWORLD Datasheet

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1N4148WS: Description0.15 A, 75 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size140KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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1N4148WS Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE

1N4148WS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	0.35 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	0.15 A
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Base Number Matches	1

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1N4148WS-V

Vishay Semiconductors

Small Signal Fast Switching Diode

Features

• These diodes are also available in other

case styles including the DO35 case

with the type designation 1N4148, the

MiniMELF case with the type

designation LL4148, and the SOT23 case with the

type designation IMBD4148-V

• Silicon epitaxial planar diode

• Fast switching diodes

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

20145

Mechanical Data

Case:

SOD323 plastic case

Weight:

approx. 4.3 mg

Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Part

1N4148WS-V

Ordering code

1N4148WS-V-GS18 or 1N4148WS-V-GS08

Type Marking

Remarks

Tape and Reel

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Parameter

Reverse voltage

Repetitive peak reverse voltage

Average rectified current half

wave rectification with resistive

load

Surge forward current

Power dissipation

Note:

Valid provided that electrodes are kept at ambient temperature.

≥

50 Hz

t < 1 s and T

= 25 °C

Test condition

Symbol

RRM

F(AV)

FSM

tot

Value

100

150

350

200

Unit

Document Number 85751

Rev. 1.7, 14-Sep-07

www.vishay.com

1N4148WS-V

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 85751

Rev. 1.7, 14-Sep-07

www.vishay.com

1N4148WS Related Products

	1N4148WS	1N4148WS-V
Description	0.15 A, 75 V, SILICON, SIGNAL DIODE	VISHAY SEMICONDUCTOR - 1N4148WS-V-GS08 - SWITCHING DIODE; 100V 150mA SOD-323; FULL REEL
Is it Rohs certified?	incompatible	conform to
Reach Compliance Code	unknow	unknown
Configuration	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V
Maximum non-repetitive peak forward current	0.35 A	0.35 A
Number of components	1	1
Maximum operating temperature	150 °C	150 °C
Maximum output current	0.15 A	0.15 A
Maximum repetitive peak reverse voltage	100 V	100 V
Maximum reverse recovery time	0.004 µs	0.004 µs
surface mount	YES	YES
Base Number Matches	1	1

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