1N5811 datasheet, PDF - EEWORLD Datasheet

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1N5811: Description6 A, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size63KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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1N5811 Overview

6 A, SILICON, RECTIFIER DIODE

1N5811 Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	E-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
application	FAST SOFT RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.875 V
JESD-30 code	E-LALF-W2
Maximum non-repetitive peak forward current	125 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Maximum repetitive peak reverse voltage	150 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.04 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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1N5811

SINTERED GLASS JUNCTION

FAST AVALANCHE RECTIFIER

VOLTAGE：150V

：

CURRENT: 3.0A

FEATURE

Glass passivated

Hermetically sealed package

Low reverse current

Soft recovery characteristics

G-4

MECHANICAL DATA

Case: G-4 sintered glass case

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Polarity: color band denotes cathode end

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Reverse Breakdown Voltage

=100µA

1N5811

150

105

150

160

3.0

125

0.875

5.0

150.0

35.5

-65 to +175

units

µA

℃

RRM

RMS

FAV

FSM

Trr

Rth(jl)

Tstg, Tj

Maximum Average Forward Rectified Current 3/8”lead

length at Ta=55℃

Peak Forward Surge Current 8.3ms single half sine-

wave superimposed on rated load

Maximum Forward Voltage at Forward Current 4A and

25℃

Maximum DC Reverse Current

Ta =25℃

at rated DC blocking voltage

Ta =100℃

Maximum Reverse Recovery Time

Typical Thermal Resistance

Storage and Operating Junction Temperature

Note:

1. Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

(Note 1)

Rev.A1

www.gulfsemi.com

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